Infineon IHW20N135R5XKSA1 IGBT TO-247 1350V Tube for efficient power control

Infineon Technologies presents the IHW20N135R5XKSA1, an insulated gate bipolar transistor (IGBT) type housed in a TO-247 package and designed for efficient power control applications. This IGBT is rated for a maximum voltage of 1350V, providing robust performance in high-voltage applications. Its design combines the fast switching capabilities of MOSFETs with the high current and voltage handling capabilities of bipolar transistors, making it suitable for demanding environments such as industrial motor drives, renewable energy conversion systems, and power inverters. With its reliable performance and high efficiency, the IHW20N135R5XKSA1 is an optimal choice for engineers seeking effective solutions in power electronics.