STDRIVEG212Q High voltage and high-speed half-bridge gate driver for GaN power switches

As a part of the STDRIVE product family, the STDRIVEG212 is a 220 V high-speed half-bridge gate driver optimized for 5 V driving enhanced-mode GaN HEMTs.

The high-side driver section is designed to support a voltage rail up to 220 V and can easily be supplied by the integrated bootstrap diode.

High-current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG212 optimized for driving high-speed GaN.

The STDRIVEG212 features supply UVLOs tailored to hard-switching applications, interlocking to avoid cross-conduction conditions and an overcurrent comparator with SmartSD.

The input pins extended range allows for easy interfacing with controllers. A standby pin allows for reducing the power consumption during inactive periods or in burst mode.

The STDRIVEG212 operates in the industrial temperature range, -40 °C to 125 °C.

The device is available in a compact QFN 4x5x1 mm package with 0.5 mm pitch.