650 V, 60 A trench field-stop IGBT with full rated silicon diode
Nexperia
Przejdź do sklepu »
- Darmowa próbka
- MPN:
- NGW60T65M3DFQ
- Producent:
- Nexperia
- Dodany do bazy:
- Ostatnio widziany:
Sugerowane produkty dla ngw60t65m3dfq
The NGW60T65M3DFQ is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW60T65M3DFQ is rated to 175 °C with optimized IGBT turn-off losses, and has a short-circuit withstand time of 5 μs. This hard-switching 650 V, 60 A IGBT is optimized for high-voltage, high-frequency applications, such as power inverters and converters.
Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.
Produkt pochodzi z oferty sklepu Nexperia