GS-065-150-1-D2

Infineon

Darmowa próbka

Kod:: GS-065-150-1-D2
Producent:: Infineon
Dodany do bazy:: 17.01.2026
Ostatnio widziany:: 26.03.2026

CoolGaN™ Automotive Transistor 100 V G1 in PQFN 3x3, 11 mΩ The IGB110S10S1Q is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. The device is qualified according to the AEC-Q101 standard and thanks to its low on-state resistance, it is the ideal choice for reliable performance in a broad range of automotive applications.

Sugerowane produkty dla coolgan

650 V CoolGaN™ e-mode power transistor for ultimate efficiency and reliability

The GS-065-150-1-D2 is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current and high switching frequency. The GS-065-150-1-D2 is a high performing GaN die designed for use in power modules for high power applications such as on-board and off-board EV chargers, traction drive, industrial power supplies and renewable energy systems. Please contact us for more information here.

Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.

Produkt pochodzi z oferty sklepu Infineon