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IMLT65R033M2H

Infineon

The CoolSiC™ MOSFET 650 V in TOLT combines the best performance of CoolSiC™ G2 with top-side cooling to achieve the highest system power density.

The CoolSiC™ MOSFET discrete 650 V Generation 2 (G2) in TOLT leverages the G2 best-in-class switching performance while enabling all the benefits of top-side cooling. Complementing the Q-DPAK package, already available with CoolSiC™ and CoolMOS™, it is now possible to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.

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