ISG0614N06NM5HSC

Infineon

Darmowa próbka

MPN:: ISG0614N06NM5HSCATMA1
Kod:: ISG0614N06NM5HSC
Producent:: Infineon
Dodany do bazy:: 17.01.2026
Ostatnio widziany:: 12.04.2026

OptiMOS™ 5 dual N-channel 60 V MOSFETs in scalable power block with dual-side cooling capability Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 1.6 mΩ each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex: PQFN 5x6 and shrink the power section on the board by at least 50%. The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual-side cooling capability boosts power throughput by a

Sugerowane produkty dla isg0614n06nm5hsc

OptiMOS™ 5 dual N-channel 60 V MOSFETs in scalable power block with dual-side cooling capability

Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 1.6 mΩ each with Q1/Q2 in a half-bridge configuration. This can replace two discrete Q1/Q2 MOSFETs ex: PQFN 5x6 and shrink the power section on the board by at least 50%.

The low parasitic inductance of the package improves switching performance & EMI while reducing overall BOM cost. The dual-side cooling capability boosts power throughput by an additional 25% with superior thermal management.

Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.

Produkt pochodzi z oferty sklepu Infineon