JANSG2N7479U3

Infineon

Darmowa próbka

Kod:: JANSG2N7479U3
Producent:: Infineon
Dodany do bazy:: 17.01.2026
Ostatnio widziany:: 27.03.2026

Rad hard N-channel MOSFET IRHNJ57Z30A is a single device with a maximum voltage of 100V and current of 22A, designed for space applications. Its low RDS(on) and gate charge reduce power losses in DC-DC converters and motor control applications. With electrical performance up to 100krad(Si) TID, this R5 MOSFET is ideal for harsh radiation environments. Comes in a compact SMD-0.5 package.

JANSG2N7479U3 R5 N-channel MOSFET is a single, rad hard device in a SMD-0.5 package with 100V and 22A capacity. It is QPL qualified and capable of electrical performance up to 500krad(Si) TID. This technology has decades of proven performance and reliability in satellite applications. The device's low RDS(on) and low gate charge make it ideal for switching applications, such as DC-DC converters and motor control.

Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.

Produkt pochodzi z oferty sklepu Infineon