IRHY67C30C

Infineon

Darmowa próbka

Kod:: IRHY67C30C
Producent:: Infineon
Dodany do bazy:: 17.01.2026
Ostatnio widziany:: 14.04.2026

The IRHY67C30CSCS R6 N-channel MOSFET is a rad-hard device with 600V and 3.4A capabilities. Its superior power technology provides improved power density and faster switching times for high speed switching applications. With low RDS(on) and high immunity to SEE, this QIRL device is ideal for space applications. It's characterized for LET up to 90MeV·cm2/mg and electrical performance up to 100krad(Si) TID.

The IRHY67C30C R5 P-channel MOSFET is rad hard with a -200V and -8A capacity. Housed in a TO-257AA package, the electrical performance is up to 100krad(Si) TID, with QIRL classification. The device has low RDS(on) and gate charge for reduced power losses in switching applications, retaining MOSFET advantages such as voltage control, fast switching, and temperature stability.

Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.

Produkt pochodzi z oferty sklepu Infineon