IRHNA6S7160SCS

Infineon

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Kod:: IRHNA6S7160SCS
Producent:: Infineon
Dodany do bazy:: 18.01.2026
Ostatnio widziany:: 27.03.2026

This R6 rad hard N-channel MOSFET comes in a SMD-2 package and on DBC carrier. With 100V and 56A capacity, it offers electrical performance up to 100krad(Si) TID. Ideal for space applications, IRHNA6S7160SCSD has low RDS(on) and gate charge, reducing power losses in switching applications such as DC-DC converters and motor controllers. Voltage control, fast switching, and temperature stability make this MOSFET ideal for any high-performance application.

Sugerowane produkty dla irhna6s7160

The IRHNA6S7160SCS R6 N-channel MOSFET is a 100V, 56A, radiation-hardened device in a SMD-2 package. With electrical performance up to 100krad(Si) TID and LET of 90 MeV·cm2/mg, it is designed for space applications. Low RDS(on) and gate charge reduce power losses in DC-DC converters and motor controllers. Voltage control, fast switching, and temperature stability make this MOSFET ideal in high-reliability applications.

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Produkt pochodzi z oferty sklepu Infineon