IRHNA57160

Infineon

Darmowa próbka

Kod:: IRHNA57160
Producent:: Infineon
Dodany do bazy:: 18.01.2026
Ostatnio widziany:: 30.09.2026

This N-channel MOSFET is a radiation-hardened device in a SMD-2 package, rated at 100V and 69A. JANSG2N7469U2 offers electrical performance up to 300krad(Si) TID and QPL classification, with low RDS(on) and gate charge for reduced power losses in switching applications. This R5 device also offers voltage control, fast switching, and temperature stability.

Sugerowane produkty dla irhna57160

The IRHNA57160 R5 N-channel MOSFET is a radiation-hardened device with a 100V, 69A rating. Its low RDS(on) and gate charge deliver high power efficiency for DC-DC converters and motor control. The COTS device is designed for space applications, with proven Total Dose and Single Event Effects characterization. The SMD-2 package features lead form down, and electrical performance is up to 100krad(Si) TID.

Elecena nie prowadzi sprzedaży elementów elektronicznych, ani w niej nie pośredniczy.

Produkt pochodzi z oferty sklepu Infineon