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IRHN57250SESCS

Infineon

IRHN57250SESCS

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Kod:: IRHN57250SESCS
Producent:: Infineon
Dodany do bazy:: 18.01.2026
Ostatnio widziany:: 27.03.2026

The IRHN57250SESCS R5 N-channel MOSFET is a 200V, 31A rad hard device for space applications. Featuring low RDS(on) and a low gate charge, it reduces power losses and maintains established MOSFET benefits such as voltage control, fast switching, and temperature stability. Characterized for SEE up to LET 80 MeV·cm2/mg with a QIRL classification, it is available in a SMD-1 package.

Sugerowane produkty dla irhn57250

The IRHN57250SESCS R5 N-channel MOSFET is a 200V, 31A rad hard device for space applications. Featuring low RDS(on) and a low gate charge, it reduces power losses and maintains established MOSFET benefits such as voltage control, fast switching, and temperature stability. Characterized for SEE up to LET 80 MeV·cm2/mg with a QIRL classification, it is available in a SMD-1 package.

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Produkt pochodzi z oferty sklepu Infineon