IRHLMS77064

The IR R7 MOSFET is a single N-channel device with a TO-254AA low ohmic package designed for use in rad hard environments. It can handle 60V and 45A while maintaining single event gate rupture and burnout immunity. With electrical performance up to 100krad(Si) TID classification, it provides a simple solution for interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.