2ED2110S06M

650 V high-side and low-side gate driver with integrated bootstrap diode

650 V high speed, high current high-side and low-side gate driver with typical 2.5 A source and sink currents in DSO-16 package for driving power MOSFET s and IGBT s.Based on our SOI-technology , the 2ED2110S06M has excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.