IKW50N65RH5

650 V, 50 A IGBT Discrete with Silicon Carbide Schottky diode

650 V, 50 A TRENCHSTOP™ 5 H5 IGBT co-packed with half-rated 6th generation Silicon Carbide CoolSiC™ Schottky barrier diode in TO-247-3 package. The ultra-fast 650 V hard-switching TRENCHSTOP™ 5 H5 IGBT benefits very low switching losses at switching speed above 30 kHz. Combination of ultra-fast TRENCHSTOP™ 5 H5 IGBT with half-rated freewheeling SiC Schottky barrier diodes in CoolSiC™ Hybrid discrete enables unprecedented reduction of total switching losses and allows to increase significantly switching frequency.