2ED2108S06F

650 V, 0.7 A half-bridge gate driver with integrated bootstrap diode in DSO-8 package

650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. The DSO-14 package for bigger creepage is also available: 2ED21084S06J .Based on Infineon’s SOI-technology , having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.