2ED21834S06J

650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-14 package

650 V half-bridge high current, and high speed gate driver for MOSFET and IGBT , with typical 2.5 A sink and source current in DSO-14 package. The smaller DSO-8 package version is also available: 2ED2183S06F .Based on Infineon’s SOI-technology , having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.