2ED2181S06F

650 V, 2.5 A high current high-side and low-side gate driver IC with integrated bootstrap diode in DSO-8 package

650 V high and low side gate driver with high current, and high speed to drive MOSFET and IGBT , with typical 2.5 A sink and source current in DSO-8 package. The DSO-14 package version for bigger creepage is also available: 2ED21814S06J .Based on Infineon’s SOI-technology , having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.