2ED21064S06J

650 V, 0.7 A high-side and low-side gate driver with integrated bootstrap diode in DSO-14 package

650 V high and low side high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-14 package. The smaller DSO-8 package version is also available: 2ED2106S06F .Based on Infineon’s SOI-technology , having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.