2ED2182S06F

650 V, 2.5 A high current half-bridge gate driver IC with integrated bootstrap diode in DSO-8 package

650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 2.5 A sink and source current in DSO-8 package. The DSO-14 package version is also available: 2ED21824S06J .Based on our Infineon's SOI-technology , having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.