1EDS5663H

GaN EiceDRIVER™ gate driver IC with excellent robustness and efficiency, the perfect fit to drive gallium nitride (GaN) HEMTs

The new single-channel galvanically isolated gate driver IC component 1EDS5663H is a perfect fit for enhancement mode (e-mode) gallium nitride (GaN) HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage, such as CoolGaN™ . It ensures robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.