S80KS5123GABHB020

The S80KS5123GABHB020 is a 512 Mb HYPERRAM™ self-refresh DRAM with 1.8 V array and I/O and an octal xSPI slave interface. It uses an 8-bit DDR data bus with 16-bit word address boundaries, supporting up to 200 MHz clock and 400 MBps throughput with tACC 35 ns. RWDS indicates refresh latency and acts as read strobe or write mask. It supports hybrid sleep and 30 µA deep power down at 105°C, and is AEC-Q100 Grade 2 qualified for -40 to 105°C.