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12-V, N channel NexFET™ power MOSFET, dual LGA, 5.9 mOhm, gate ESD protection

Texas Instruments

This 12-V, 9.9-mΩ, 2.2-mm × 1.15-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small footprint and common drain configuration make the device ideal for battery pack applications in small handheld devices.

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