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20-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2 mm, 27 mOhm, gate ESD protection | DLV | 6 | -55 to 150

Texas Instruments

20-V, N channel NexFET™ power MOSFET, dual SON 2 mm x 2 mm, 27 mOhm, gate ESD protection | DLV | 6 | -55 to 150 RSS Sample
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MPN:
CSD85301Q2
Producent:
TEXAS INSTRUMENTS
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The CSD85301Q2

is a 20V, 23mΩ N-Channel device with dual independent MOSFETs in a SON 2mm x 2mm

plastic package. The two FETs were designed to be used in a half bridge

configuration for synchronous buck and other power supply applications.

Additionally, this part can be used for adaptor, USB input protection and battery

charging applications. The dual FETs feature low drain to source on-resistance that

minimizes losses and offers low component count for space constrained

applications.

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