8V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 9.9 mOhm, gate ESD protection

This –8 V, 8.2 mΩ, 1.5 mm × 1.5 mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile. Low on-resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.