InGaP HBT Power Amplifier SMT, 2.2 - 2.8 GHz

The HMC414MS8G(E) is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifier which operates between 2.2 and 2.8 GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20 dB of gain, +30 dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/ current control.

Applications

* BLUETOOTH

* MMDS

* Gain: 20 dB

* Saturated Power: +30 dBm

* 32% PAE

* Supply Voltage: +2.75V to +5V

* Power Down Capability

* Low External Part Count