GaAs, InGaP, HBT, MMIC, Ultralow Phase Noise, Distributed Amplifier, 2 GHz to 18 GHz

The HMC606LC5 is a gallium arsenide (GaAs), indium gallium phosphide (InGaP), heterojunction bipolar transistor (HBT), monolithic microwave integrated circuit (MMIC) distributed amplifier housed in a 32-terminal, ceramic, leadless chip carrier (LCC) package that operates from 2 GHz to 18 GHz. With an input signal of 12 GHz, the amplifier provides ultralow phase noise performance of −160 dBc/Hz at a 10 kHz offset, representing a significant improvement over field effect transistor (FET)-based distributed amplifiers.

The HMC606LC5 provides 13.5 dB of small signal gain, 27 dBm output IP3, and 15 dBm of output power for 1 dB compression while requiring 64 mA from a 5.0 V supply. The input and output of the HMC606LC5 amplifier are internally matched to 50 Ω and are internally dc blocked.

Applications

* Radars, electronic warfare (EW), and electronic counter measures (ECMs)

* Microwave radios

* Test instrumentation

* Military and space

* Fiber optic systems

* Ultralow phase noise: −160 dBc/Hz typical at 10 kHz* Output power for 1 dB compression (P1dB): 15 dBm typical at 2 GHz to 12 GHz frequency range* Gain: 13.5 dB typical at 2 GHz to 12 GHz frequency range* Output third-order intercept (IP3): 27 dBm typical at 2 GHz to 12 GHz frequency range* Supply voltage: 5.0 V at 64 mA typical* 50 Ω matched input/output* 32-terminal, ceramic, leadless chip carrier (LCC)