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30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection

Texas Instruments

30-V, N channel NexFET™ power MOSFET, single LGA 1 mm x 0.6mm, 67 mOhm, gate ESD protection RSS Sample
  • Darmowa próbka
MPN:
CSD17382F4
Producent:
TEXAS INSTRUMENTS
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Ostatnio widziany:

This 30-V, 54-mΩ, N-Channel FemtoFET™ MOSFET technology is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.

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