High Power, 44 W Peak, Silicon SPDT, Reflective Switch, 0.7 GHz to 3.5 GHz

The ADRF5130 is a high power, reflective, 0.7 GHz to 3.8 GHz, silicon, single-pole, double-throw (SPDT) switch in a leadless, surface-mount package. The switch is ideal for high power and cellular infrastructure applications, like long-term evolution (LTE) base stations.

The ADRF5130 has high power handling of 43 dBm (maximum) and 0.1 dB compression (P0.1dB) of 46 dBm, with a low insertion loss of 0.6 dB at 2 GHz and 0.7 dB at 3.5 GHz. On-chip circuitry operates at a single, positive supply voltage of 5 V and typical supply current of 1.06 mA, making the ADRF5130 an ideal alternative to pin diode-based switches.

The device comes in a RoHS compliant, compact, 24-lead, 4 mm × 4 mm LFCSP package.

Applications

* Cellular/4G infrastructure

* Wireless infrastructure

* Military and high reliability applications

* Test equipment

* Pin diode replacement

* Reflective, 50 Ω design

* Low insertion loss:

* 0.6 dB typical to 2.0 GHz

* 0.7 dB typical to 3.5 GHz

* High isolation

* 50 dB typical to 2.0 GHz

* 46 dB typical to 3.5 GHz

* High power handling

* RF input power, continuous wave (CW) at TCASE = 85°C

* 43 dBm maximum operating

* 46.5 dBm absolute maximum rating