RF POWER LDMOS TRANSISTOR 900-1215 MHz, 1000 W Peak, 52 V

These RF power devices, MMRF1312H, MMRF1312HS and MMRF1312GS, are designed for pulse applications operating at frequencies from 900 to 1215 MHz. The devices are suitable for use in pulse applications with large duty cycles and long pulses and are ideal for use in high power military and commercial L-Band radar applications such as IFF and DME/TACAN.