TSAL4400 infrared diode, GaAlAs, 940 nm, 50°, 3 mm, T1

High Power Infrared Emitting Diode, 940 nm, GaAlAs, MQW

Descriptions TSAL4400 is an infrared, 940 nm emitting diode in GaAlAs, MQW technology with high radiant power molded in a blue-gray plastic package.

Features - Package type: leaded - Package form: T-1 - Dimensions (in mm): Ø 3 - Peak wavelength: ?p = 940 nm - High reliability - High radiant power - High radiant intensity - Angle of half intensity: ? = ± 25° - Low forward voltage - Suitable for high pulse current operation - Good spectral matching with Si photodetectors - Package matches with detector TEFT4300

Applications - Infrared remote control units - Free air transmission systems - Infrared source for optical counters and card readers