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IRF3710ZPBF MOSFET, N-Ch 100V 59A 0.018R , TO-220AB

reichelt elektronik

HEXFET® Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features - Advanced Process Technology - Ultra Low On-Resistance - Dynamic dv/dt Rating - 175°C Operating Temperature - Fast Switching - Repetitive Avalanche Allowed up to Tjmax - Lead-Free

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