IRFBG30PBF MOSFET, N-Ch 1000V 3.1A 5.0R, TO-220AB

The HEXFETs technology is the key to international Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The TO-220 package is universally preferred for all commercial -industrial applications at power dissipation levels to approximately 50 watts. Te low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features - repetitive avalanche rated - ease of paralleling - fast switching - simple drive requirements