IRFR1205PBF MOSFET, N-Ch 55V 37A 0.027R, D-PAK

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Park is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dessipation levels up to 1.5 watts are possible in typical surface mount applications.

Features - ultra low on-resistance - surface mount (IRFR1205) - straight lead (IRFU1205) - advanced process technology - fast switching - fully avalanche rated - lead free