Sample

Single P-channel Enhancement-Mode MOSFET

... 1.5 V and an IDSS of only 0.5 uA ...

Sample

Single P-channel Enhancement-Mode MOSFET

... 1.5 V and an IDSS of only 0.5 uA ...

Sample

Dual P-channel Enhancemenent-Mode MOSFET

... 1.5 V and an IDSS of only 0.5 uA ...

N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology

... for low RDSon. Low IDSS leakage even when hot ...

N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology

... for low RDSon. Low IDSS leakage even when hot ...

N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology

... for low RDSon, low IDSS leakage even when hot ...

N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology

... for low RDSon. Low IDSS leakage even when hot ...

N-channel 30 V, 2.1 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology

... delivers low RDSon, low IDSS leakage and high ...

N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology

... delivers low RDSon, low IDSS leakage and high ...

N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology

... delivers low RDSon, low IDSS leakage and high ...

0.50

J300D tranzystor n-channel JFET Vds=25V, Ig=10mA, Idss=21 - 45 mA, Pd=350mW TO-92 SILICONIX

BF410

N-FET 20V Idss>0.5mA BF410B =2SK108 , (= ...

BF 411 N-FET 20V IDSS > 0.7MA

BF 411 N-FET 20V IDSS > 0.7MA BF411 N- ...

2SK168

FM-V/M/O 30V Idss>4mA Up<3V =BF410

J176A TO92 P-JFET 30V 2-50mA 250R IDSS 2-35mA