PE-0402CD330JTG

Ind RF Chip Wirewound 33nH 5% 250MHz 24Q-Factor Ceramic 350mA 0402 T/R

AISC-1008-R033J-T

Ind Chip Wirewound 33nH 5% 50MHz 60Q-Factor Ceramic 1A 1008 T/R

SXE9674-Z50-81-33N

IMI NORGREN Zawór kierunkowy SXE9674-Z50-81-33N 2 do 16 bar 1 szt.

AIMC-0402-33NJ-T

Ind Chip Unshielded Multi-Layer 10nH 5% 100MHz 9Q-Factor Ceramic 300mA 0402 T/R

LG HK 2125 33NJ-T

YTULG HK 2125 8N2J-T

MKT 33nF/100V 10% RM5

NML04G33NTRF

Ind Chip Multi-layer 33nH 2% 100MHz 8Q-Factor 200mA 0402 T/R

CLH1608T-33NJ-N

Ind RF Chip Multi-Layer 120nH 10% 100MHz 8Q-Factor Ceramic 250mA 0603 T/R

CS1008-33NJ-N

Ind RF Chip Wirewound 33nH 5% 50MHz 60Q-Factor Ceramic 1A 1008 T/R

CE201210-33NJ

Ind Chip Multi-Layer 5.6nH 5% 100MHz 20Q-Factor Ceramic 300mA 0805 T/R

CW100505-33NJ

Ind Chip Wirewound 2.7nH 0.3nH 250MHz 16Q-Factor Ceramic 640mA 0402 T/R

8SLVD1204-33NLGI

2:4, LVDS Output Fanout Buffer, 3.3 V

PM0603-33NJ-RC

Ind Chip Wirewound 10nH 5% 250MHz 30Q-Factor Alumina 700mA 0603 T/R

440-33N+C

Waga precyzyjna Kern 440-33N+C, Zakres pomiaru maks.: 200 g, Podziałka: 0.01 g

CW201212-33NJ

Ind Chip Wirewound 6.8nH 5% 250MHz 60Q-Factor Ceramic 600mA 0805 T/R

CI160808-33NJ

Ind Chip Multi-Layer 220nH 5% 50MHz 8Q-Factor Ceramic 200mA 0603 T/R

CW160808-33NG

Ind Chip Wirewound 39nH 2% 250MHz 35Q-Factor Alumina 600mA 0603 T/R

CI100505-33NJ

Ind Chip Multi-Layer 56nH 5% 100MHz 8Q-Factor Ceramic 100mA 0402 T/R

IMC0402ER33NG01

Ind RF Chip Wirewound 33nH 2% 250MHz 24Q-Factor 400mA 0402 T/R

36401E33NJTDF

Ind High Frequency Chip Molded/Unshielded Thin Film 33nH 5% 500MHz 13Q-Factor 75mA 0402 T/R

IMC0603ER33NG01

Ind Chip Wirewound 33nH 2% 250MHz 43Q-Factor Ceramic 600mA 0603 T/R

1624108-9

3640 0402 33NH 5% 10K RL

RSK 33N

Wirebondable Dual Value Thin Film Chip Resistor Networks, Center Tap

RMK 33N

Wirebondable Dual Value Thin Film Chip Resistor Networks, Center Tap