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    IAUZN04S7N026

    40 V, N-Ch, 2.64 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-Clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for automotive applications, e.g. power distribution, body control modules, and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2946 kB
    Stron:
    12
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    IAUZN04S7N013

    40 V, N-Ch, 1.33 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-Clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for automotive applications, e.g. power distribution, body control modules, and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2945 kB
    Stron:
    12
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    IAUZN04S7N020

    40 V, N-Ch, 2 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-Clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for automotive applications, e.g. power distribution, body control modules, and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2935 kB
    Stron:
    12
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    IAUZN04S7N049

    40 V, N-Ch, 4.93 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-Clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for automotive applications, e.g. power distribution, body control modules, and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2924 kB
    Stron:
    12
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    IAUZN04S7L046

    40 V, N-Ch, 4.59 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-Clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for automotive applications, e.g. power distribution, body control modules, and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2913 kB
    Stron:
    12
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    IAUZN08S7N046

    80 V, N-Ch, 4.6 mΩ max, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 IAUZN08S7N046 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80 V. This product is offered a lead-less 3x3mm2 SMD package. The S3O8 package utilizes a copper clip to offer lower package resistance and inductance as compared to traditional gullwing lead packages. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applicatio
    Producent:
    Infineon
    Rozmiar:
    2325 kB
    Stron:
    12
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    IAUZN04S7L012

    40 V, N-Ch, 1.25 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for Automotive applications, e.g. power distribution, body control modules and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2305 kB
    Stron:
    12
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    IAUZN04S7L019

    40 V, N-Ch, 1.90 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for Automotive applications, e.g. power distribution, body control modules and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2303 kB
    Stron:
    12
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    IAUZN10S7N078

    100 V, N-Ch, 7.8 mΩ max, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 IAUZN10S7N078 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered a lead-less 3x3mm2 SMD package. The S3O8 package utilizes a copper clip to offer lower package resistance and inductance as compared to traditional gullwing lead packages. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applicat
    Producent:
    Infineon
    Rozmiar:
    2302 kB
    Stron:
    12
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    IAUZN04S7L030

    40 V, N-Ch, 3.05 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for Automotive applications, e.g. power distribution, body control modules and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2300 kB
    Stron:
    12
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    IAUZN04S7L025

    40 V, N-Ch, 2.56 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for Automotive applications, e.g. power distribution, body control modules and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2298 kB
    Stron:
    12
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    IAUZN04S7N032

    40 V, N-Ch, 3.25 mΩ, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 A high-current, low RDS(on) power MOSFET in a 3x3mm² advanced leadless package with a Cu-clip for low package Ron and minimal stray inductance, offering high power density, low conduction losses and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for Automotive applications, e.g. power distribution, body control modules and electric motors.
    Producent:
    Infineon
    Rozmiar:
    2294 kB
    Stron:
    12
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    IAUZN08S7L177

    80 V, N-Ch, 17.7 mΩ max, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 IAUZN08S7L177 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 80 V. This product is offered a lead-less 3x3mm2 SMD package. The S3O8 package utilizes a copper clip to offer lower package resistance and inductance as compared to traditional gullwing lead packages. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applicati
    Producent:
    Infineon
    Rozmiar:
    2270 kB
    Stron:
    12
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    IAUZN10S7L289

    100 V, N-Ch, 28.9 mΩ max, Automotive Power MOSFET, S3O8 (3x3), OptiMOS™ 7 IAUZN10S7L289 is an automotive MOSFET built with Infineon’s leading edge, power semiconductor technology; OptiMOS™ 7 100 V. This product is offered a lead-less 3x3mm2 SMD package. The S3O8 package utilizes a copper clip to offer lower package resistance and inductance as compared to traditional gullwing lead packages. It is designed specifically for the high performance, quality, and robustness needed for demanding automotive applica
    Producent:
    Infineon
    Rozmiar:
    2266 kB
    Stron:
    12
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    MAX11190

    MAX11190 Dual, Simultaneous Sampling, 2.2V to 3.6V, 12-Bit, 3Msps SAR ADC in 3x3mm TQFN Package
    Producent:
    Maxim Integrated
    Rozmiar:
    1323 kB
    Stron:
    19
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    NTTFD4D1N03P1E

    Dual Power MOSFETs, N-Channel, Symmetric, 3x3mm, 30V/4.5mΩ, 54A 
    Producent:
    onsemi
    Rozmiar:
    352 kB
    Stron:
    11
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    MAX8636

    MAX8636 Dual 300mA Pin Programmable Low Noise Regulators in 2x2mm &microDFN or 3x3mm TDFN
    Producent:
    Maxim Integrated
    Rozmiar:
    284 kB
    Stron:
    13
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    MAX1508

    MAX1508 Linear Li+ Battery Charger with Integrated Pass FET, Thermal Regulation, and AC OK Flag in 3x3mm Thin DFN
    Producent:
    Maxim Integrated
    Rozmiar:
    258 kB
    Stron:
    11
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    MAX1507

    MAX1507 Linear Li+Battery Charger with Integrated FET and Programmable Thermal Regulation in 3x3mm, Thin DFN
    Producent:
    Maxim Integrated
    Rozmiar:
    167 kB
    Stron:
    12