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    AIMC-0402-10NJ-T

    Ind Chip Unshielded Multi-Layer 10nH 5% 100MHz 9Q-Factor Ceramic 300mA 0402 T/R
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    AIMC-0402HQ-4N1C-T

    Ind Chip Unshielded Multi-Layer 4.1nH 0.2nH 250MHz 20Q-Factor Ceramic 650mA 0402 T/R
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    AIMCQ120R040M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
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    AIMCQ120R060M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
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    AIMCQ120R080M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
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    Infineon
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    1551 kB
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    AIMCQ120R030M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
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    Infineon
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    1548 kB
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    AIMCQ120R120M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1538 kB
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    AIMCQ120R020M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1537 kB
    Stron:
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    AIMCQ120R160M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1537 kB
    Stron:
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    AIMC-0603-47NJ-T

    Ind Chip Shielded Multi-Layer 47nH 5% 100MHz 12Q-Factor Ceramic 300mA 0603 T/R
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    Abracon
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    1290 kB
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    AIMC-0805-15NJ-T

    Ind Chip Shielded Multi-Layer 15nH 5% 100MHz 15Q-Factor Ceramic 300mA 0805 T/R
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    1254 kB
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    AIMC-0201-1N5S-T

    Ind Chip Unshielded Multi-Layer 1.5nH 0.3nH 100MHz 4Q-Factor Ceramic 300mA 0201 T/R
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    1187 kB
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