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IAUAN04S7N010

OptiMOS 7™ 40V sTOLL 7x8 New benchmark for best Ron, high power density & efficiency Automotive standard sTOLL 7x8 (HSOF-5) offers high current capability of 280A at a footprint of 7x8mm². In combination with Infineon’s leading OptiMOS-7™ 40V Power MOSFET technology it offers best in class power density and power efficiency at Infineon’s high-quality level for robust automotive packages.

Producent:
Infineon

Rozmiar:
2469 kB

Stron:
12
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IPP014N08NM6

OptiMOS™ 6 n-channel power MOSFET 80 V in TO-220 OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.

Producent:
Infineon

Rozmiar:
1668 kB

Stron:
11
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ISC008N06LM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1547 kB

Stron:
14
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ISC025N06LM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1491 kB

Stron:
13
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IQE036N08NM6SC

OptiMOS™ 6 n-channel power MOSFET 80 V in PQFN 3.3x3.3 Source Down Dual-Side Cooling OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.

Producent:
Infineon

Rozmiar:
1381 kB

Stron:
11
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IQE036N08NM6CGSC

OptiMOS™ 6 n-channel power MOSFET 80 V in PQFN 3.3x3.3 Source Down Center Gate Dual-Side Cooling OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.

Producent:
Infineon

Rozmiar:
1301 kB

Stron:
11
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ISC060N06NM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1270 kB

Stron:
15
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ISZ025N06NM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1268 kB

Stron:
13
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ISZ072N06NM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1267 kB

Stron:
13
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ISZ023N06LM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1261 kB

Stron:
11
Do dokumentacji »
IQE018N06NM6SC

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1256 kB

Stron:
15
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ISC009N06NM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1223 kB

Stron:
15
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IPB014N08NM6

OptiMOS™ 6 n-channel power MOSFET 80 V in D²PAK OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.

Producent:
Infineon

Rozmiar:
1147 kB

Stron:
11
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IQE018N06NM6CGSC

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on) in SuperSO8. These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1131 kB

Stron:
15
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IQE036N08NM6CG

OptiMOS™ 6 n-channel power MOSFET 80 V in PQFN 3.3x3.3 Source Down Center Gate OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.

Producent:
Infineon

Rozmiar:
1127 kB

Stron:
11
Do dokumentacji »
IQE018N06NM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1104 kB

Stron:
15
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ISC018N08NM6SC

OptiMOS™ 6 n-channel power MOSFET 80 V in SuperSO8 Dual-Side Cooling OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >21% lower RDS(on) and ~40% improved FOMQg x RDS(on) in SuperSO8 DSC. The performance improvements lead to higher system efficiency and power density. Contact us for more information!

Producent:
Infineon

Rozmiar:
1098 kB

Stron:
15
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ISC031N08NM6SC

OptiMOS™ 6 n-channel power MOSFET 80 V in SuperSO8 Dual-Side Cooling OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >21% lower RDS(on) and ~40% improved FOMQg x RDS(on) in SuperSO8 DSC. The performance improvements lead to higher system efficiency and power density. Contact us for more information!

Producent:
Infineon

Rozmiar:
1096 kB

Stron:
15
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ISC007N06NM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1096 kB

Stron:
15
Do dokumentacji »
ISC009N06NM6SC

OptiMOS™ 6 n-channel power MOSFET 60 V in SuperSO8 Dual-Side Cooling OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~32% improved FOMQg x RDS(on) in SuperSO8 DSC. The performance improvements lead to higher system efficiency and power density.

Producent:
Infineon

Rozmiar:
1096 kB

Stron:
15
Do dokumentacji »
ISC007N06LM6

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
1094 kB

Stron:
15
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IPF011N08NM6

OptiMOS™ 6 n-channel power MOSFET 80 V in D²PAK 7-pin OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.

Producent:
Infineon

Rozmiar:
1093 kB

Stron:
11
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IQE036N08NM6

OptiMOS™ 6 n-channel power MOSFET 80 V in PQFN 3.3x3.3 Source Down OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.

Producent:
Infineon

Rozmiar:
1093 kB

Stron:
11
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IPT009N08NM6

OptiMOS™ 6 n-channel power MOSFET 80 V in TOLL OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement resulting to higher system efficiency and power density.

Producent:
Infineon

Rozmiar:
1042 kB

Stron:
11
Do dokumentacji »
IQE018N06NM6CG

OptiMOS™ 6 60 V - the latest power MOSFET technology setting the new industry standard for benchmark performance. Compared to its predecessor, OptiMOS™ 5, Infineon's latest wafer technology offers significant performance improvement, including >37% lower RDS(on) and ~25% improved FOMQg x RDS(on). These improvements lead to higher system efficiency and power density in soft-switching topologies and low-frequency applications.

Producent:
Infineon

Rozmiar:
921 kB

Stron:
12