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    JANSR2N7592T3

    JANSR2N7592T3 N-channel MOSFET is designed for high-performance power in space applications. These rad hard R6 MOSFETs are capable of up to 100V and 20A, with electrical performance up to 300krad(Si) TID. In a TO-257AA low ohmic package, these MOSFETs provide low RDS(on) and low gate charge for reduced power losses in switching applications. The MOSFETs are QPL qualified and retain all the benefits of MOSFET technology.
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    Infineon
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    1398 kB
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    14
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    JANSF2N7468U2A

    JANSF2N7468U2A is a rad hard R5 N-channel MOSFET with 60V and 75A capacity. Housed in a SupIR-SMD package, the electrical performance is up to 300krad(Si) TID and QPL qualification. Low RDS(on) and gate charge reduce power losses for high performance and reliability in space applications. Switching applications such as DC-DC converters and motor control benefit from its proven flight heritage and reliability.
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    Infineon
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    1234 kB
    Stron:
    8
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    IMLT65R026M2H

    The CoolSiC™ MOSFET 650 V in TOLT combines the best performance of CoolSiC™ G2 with top-side cooling to achieve the highest system power density. The CoolSiC™ MOSFET discrete 650 V Generation 2 (G2) in TOLT leverages the G2 best-in-class switching performance while enabling all the benefits of top-side cooling. Complementing the Q-DPAK package, already available with CoolSiC™ and CoolMOS™, it is now possible to implement a total discrete top-side cooling solution, obtaining better thermal performance, syst
    Producent:
    Infineon
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    1196 kB
    Stron:
    19
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    IMLT65R015M2H

    CoolSiC™ MOSFET 650 V G2 in TOLT package The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.
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    Infineon
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    1196 kB
    Stron:
    19
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    IMLT65R033M2H

    The CoolSiC™ MOSFET 650 V in TOLT combines the best performance of CoolSiC™ G2 with top-side cooling to achieve the highest system power density. The CoolSiC™ MOSFET discrete 650 V Generation 2 (G2) in TOLT leverages the G2 best-in-class switching performance while enabling all the benefits of top-side cooling. Complementing the Q-DPAK package, already available with CoolSiC™ and CoolMOS™, it is now possible to implement a total discrete top-side cooling solution, obtaining better thermal performance, syst
    Producent:
    Infineon
    Rozmiar:
    1194 kB
    Stron:
    19
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    IMLT65R020M2H

    CoolSiC™ MOSFET 650 V G2 in TOLT package The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.
    Producent:
    Infineon
    Rozmiar:
    1193 kB
    Stron:
    19
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    IMLT65R060M2H

    CoolSiC™ MOSFET 650 V G2 in TOLT package, 60 mΩ The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.
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    Infineon
    Rozmiar:
    1192 kB
    Stron:
    19
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    IMLT65R040M2H

    CoolSiC™ MOSFET 650 V G2 in TOLT package The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.
    Producent:
    Infineon
    Rozmiar:
    1191 kB
    Stron:
    19
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    IMLT65R050M2H

    CoolSiC™ MOSFET 650 V G2 in TOLT package, 50 mΩ The CoolSiC™ MOSFET discrete 650 V G2 in TOLT leverages the CoolSiC™ Generation 2 best-in-class switching performance, enabling in addition all of the benefits of top-side cooling. It is now possible to complement the QDPAK, already available with CoolSiC™ and CoolMOS™, to implement a total discrete top-side cooling solution, obtaining better thermal performance, system cost reduction and simplification, and a cheaper assembly.
    Producent:
    Infineon
    Rozmiar:
    1189 kB
    Stron:
    19
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    BSC160N15NS5SC

    OptiMOS™ 5 power MOSFETs 150 V in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance OptiMOS™ 5 power MOSFETs 150 V in SuperSO8 DSC (dual-side cooling) package offers thermal benefits of dual-side cooling with industry-standard footprint. About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB, thus, either the PCB runs cooler at the same power dissipation improving reliability, or more power can be handled by the MO
    Producent:
    Infineon
    Rozmiar:
    1137 kB
    Stron:
    14
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    ISC016N08NM8SC

    OptiMOS™ 8 n-channel power MOSFET 80 V in SuperSO8 DSC package with dual-side cooling (DSC) The OptiMOS™ 8 power MOSFET in SuperSO8 DSC (dual-side cooling) package offers all thermal management benefits of dual-side cooling solutions with an industry-standard footprint.
    Producent:
    Infineon
    Rozmiar:
    1100 kB
    Stron:
    15
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    CYEL18V2562-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require
    Producent:
    Infineon
    Rozmiar:
    1054 kB
    Stron:
    56
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    CYEL18V5122-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require
    Producent:
    Infineon
    Rozmiar:
    974 kB
    Stron:
    52
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    IRHMS57Z60SCS

    IRHMS57Z60SCS, a rad hard, 30V, 45A N-channel MOSFET in a TO-254AA low ohmic package is ideal for space applications. These R5 MOSFETs have low RDS(on) and gate charge, which reduces power losses in switching applications like DC-DC converters and motor controllers. With voltage control, fast switching, and temperature stability, they retain the benefits of traditional MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    843 kB
    Stron:
    13
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    CYEL18V2563-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require
    Producent:
    Infineon
    Rozmiar:
    841 kB
    Stron:
    51
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    IRHMK57160SCS

    IRHMK57160SCS R5 MOSFET is a single N-channel device in a TO-254AA tabless SMD package that is rad hard, with a rating of 100V and 45A. It is COTS rated and has high electrical performance up to 100krad (Si) TID. With low RDS(on) and low gate charge, this MOSFET is suitable for switching applications in space under harsh conditions. It retains all the benefits of MOSFETs with high performance and reliability.
    Producent:
    Infineon
    Rozmiar:
    822 kB
    Stron:
    13
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    CYEL18V5123-200BKXE

    Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM and SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8- channel serial SRAM. This innovative technology is packaged in a compact, low pin count plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites th
    Producent:
    Infineon
    Rozmiar:
    780 kB
    Stron:
    50
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    XDPS2201E

    The XDP™ XDPS2201E PWM controller multimode hybrid-flyback controller supporting extra high power density designs The XDP™ XDPS2201E PWM controller is a highly integrated, multimode DC-DC hybrid-flyback (HFB) controller. The controller enables reduction of external parts and optimizes performance. It serves applications with fixed output voltage and offers even more benefits for applications with wide output voltage range.
    Producent:
    Infineon
    Rozmiar:
    722 kB
    Stron:
    41
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    BSG0812ND

    OptiMOS™ 5 25 V Power Block in 5x6 mm² OptiMOS™ 5 Power Block is a leadless SMD package in a 5x6 mm² package, including a low-side and a high-side MOSFET in a synchronous buck converter configuration. By replacing two separate discrete packages, such as SO8 or SuperSO8, with the Power Block, customers can shrink their designs up to 85%. Standardizing power packages benefits the customer, as the number of different package outlines available in the market place is minimized.
    Producent:
    Infineon
    Rozmiar:
    527 kB
    Stron:
    14
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    IRHF57214SESCS

    The IRHF57214SESCS R5 N-channel MOSFET is a reliable space-grade MOSFET. It is rad hard, has a 250V and 2.2A rating, and is QIRL qualified. Its low RDS(on) and gate charge minimize power losses, making it ideal for DC-DC converters and motor control applications. With proven performance in satellite applications, it retains the benefits of MOSFETs, including voltage control, fast switching, and temperature stability.
    Producent:
    Infineon
    Rozmiar:
    409 kB
    Stron:
    8
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    IRHNM9A7120SCS

    This part is active, but not recommended for new design. A new footprint compatible package version will be released soon. IRHNM9A7120SCS is a rad hard R9 N-channel MOSFET in a SMD-0.2 package. With a voltage rating of 100V and a current rating of 23A, this single MOSFET is ideal for space applications. It has electrical performance up to 100krad(TID) and QIRL classification. The low RDS(on) and fast switching times make it perfect for DC-DC converters and motor control. It retains all the benefits of MOSF
    Producent:
    Infineon
    Rozmiar:
    374 kB
    Stron:
    9
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    IRHMB57064SCS

    IRHMB57064SCS rad hard N-channel MOSFET, in TO-254AA tabless low ohmic package, has 45A and 60V capabilities, with 100krad(Si) TID tolerance and QIRL classification. Proven reliability and performance for decades in space and satellite applications, with low RDS(on) and gate charge, make it ideal for DC-DC converters and motor control. It retains MOSFET benefits such as voltage control, fast switching, and temperature stability.
    Producent:
    Infineon
    Rozmiar:
    178 kB
    Stron:
    8
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    IRHN57250SESCS

    The IRHN57250SESCS R5 N-channel MOSFET is a 200V, 31A rad hard device for space applications. Featuring low RDS(on) and a low gate charge, it reduces power losses and maintains established MOSFET benefits such as voltage control, fast switching, and temperature stability. Characterized for SEE up to LET 80 MeV·cm2/mg with a QIRL classification, it is available in a SMD-1 package.
    Producent:
    Infineon
    Rozmiar:
    177 kB
    Stron:
    8
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    IRHMB57Z60SCS

    IRHMB57Z60SCS R5 rad hard N-channel MOSFET in a TO-254AA tabless low ohmic package, has 45A and 30V capabilities. With up to 100krad(Si) TID tolerance and QIRL classification, it has excellent performance and reliability in space and satellite applications. Its low RDS(on) and gate charge make it ideal for DC-DC converters and motor control, while retaining MOSFET benefits like voltage control, fast switching, and temperature stability.
    Producent:
    Infineon
    Rozmiar:
    165 kB
    Stron:
    8
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    IRHM7450SESCS

    The IRHM7450SESCS N-channel MOSFET is a rad hard device built with IR HiRel R4 technology. Rated at 500V and 12A, with electrical performance up to 100krad(Si) TID and QIRL classification. The device's low RDS(on) and gate charge reduce power losses in DC-DC converters and motor control applications. The TO-254AA package ensures the MOSFET's well-established benefits, including voltage control and temperature stability.
    Producent:
    Infineon
    Rozmiar:
    142 kB
    Stron:
    8