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    IRHLYS77034CMSCSA

    IRHLYS77034CMSCSA R7 is a rad hard, low ohmic MOSFET in a TO-257AA package. With a 60V, 20A rating and electrical performance up to 100krad(Si) TID, it offers single event gate rupture and burnout immunity. The device provides a simple solution to interfacing CMOS and TTL control circuits to power devices in space and radiation environments. It's ideal for direct interface with most logic gates and linear ICs.
    Producent:
    Infineon
    Rozmiar:
    2678 kB
    Stron:
    9
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    IRHLNS87Y50SCS

    IRHLNS87Y50SCS is a rad hard N-channel MOSFET with 20V, 75A capacity. It is housed in a SupIR-SMD package with electrical performance up to 100krad(Si) TID and QIRL space-grade classification. With single-event gate rupture and burnout immunity, it's ideal for interfacing with logic gates, linear ICs, and micro-controllers. This R8 FET can also increase the output current of a PWM, voltage comparator, or an operational amplifier.
    Producent:
    Infineon
    Rozmiar:
    1107 kB
    Stron:
    14
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    IRHLNA77064SCSA

    IRHLNA77064SCSA R7 MOSFET is a rad hard, 60V, 56A single N-channel device in a SMD-2 package. It offers electrical performance up to 100krad(Si) TID with QIRL space qualification. The threshold voltage stays within the acceptable operating limits over the full operating temperature and post radiation. It also maintains single event gate rupture and burnout immunity, making it ideal for use in radiation-prone environments.
    Producent:
    Infineon
    Rozmiar:
    1101 kB
    Stron:
    9
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    IRHLF87Y20SCS

    IRHLF87Y20SCS is a rad hard, 20V, 12A N-channel MOSFET in TO-205AF package. It offers electrical performance up to 100krad(Si) TID and QIRL classification. Ideal for interfacing with CMOS and TTL control circuits, it delivers immunity to single event gate rupture and burnout while maintaining acceptable operating limits. It can also increase the output current of a PWM, voltage comparator or an operational amplifier.
    Producent:
    Infineon
    Rozmiar:
    1030 kB
    Stron:
    14
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    IRHLNM7S7110SCS

    IRHLNM7S7110SCS is a radiation-hardened, single R7 N-channel MOSFET with 250V, 6.5A capacity in SMD-0.2 package. Its electrical performance is up to 100krad(Si) TID, making it ideal for space applications. With single event gate rupture and burnout immunity, it's a reliable solution for interfacing CMOS and TTL control circuits with power devices. QIRL space-qualified, it's designed for radiation environments.
    Producent:
    Infineon
    Rozmiar:
    982 kB
    Stron:
    10
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    IRHLMS77064SCS

    IRHLMS77064SCS R7 MOSFET is a rad hard, 60V, 45A single N-channel device in a TO-254AA low ohmic package. It offers electrical performance up to 100krad(Si) TID with QIRL space qualification. The threshold voltage stays within the acceptable operating limits over the full operating temperature and post radiation. It also maintains single event gate rupture and burnout immunity, making it ideal for use in radiation-prone environments.
    Producent:
    Infineon
    Rozmiar:
    973 kB
    Stron:
    9
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    IRHLF77110SCS

    IRHLF77110SCS is an R7 60V, 6A rad hard N-channel MOSFET in TO-205AF package. It features electrical performance up to 100krad(Si) TID, is QIRL space-qualified, and offers single event gate rupture and burnout immunity. With a consistent threshold voltage across all temperatures, it is ideal for interfacing with logic gates, microcontrollers, and other devices that operate on a 3.3-5V source. It can also be used to increase output current.
    Producent:
    Infineon
    Rozmiar:
    956 kB
    Stron:
    9
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    IRHLMS797064SCS

    IRHLMS797064SCS is a R7, rad hard, -60V, -45A, single, P-channel MOSFET in a TO-254AA low ohmic package. It has electrical performance up to 100krad(Si) TID and is QIRL classified, while also maintaining immunity to single event gate rupture and burnout. Ideal for interfacing with most logic gates, linear ICs, and micro-controllers operating from a 3.3-5V source and increasing output current of devices with a logic-level drive signal.
    Producent:
    Infineon
    Rozmiar:
    893 kB
    Stron:
    14
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    IRHLNMC87Y20SCS

    This part is active, but not recommended for new design. A new footprint compatible package version will be released soon. IRHLNMC87Y20SCS is a rad hard N-channel R8 MOSFET in a SMD-0.2 package. It has a 20V, 17A capacity and can withstand up to 300krad(Si) TID with QIRL space-grade classification. With single-event gate rupture and burnout immunity, it is ideal for interfacing with logic gates, linear ICs, and micro-controllers. The threshold voltage remains stable over full operating temperature and radi
    Producent:
    Infineon
    Rozmiar:
    854 kB
    Stron:
    14
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    IRHLNA797064SCVD

    IRHLNA797064SCVD is a R7, rad hard, -60V, -56A, single, P-channel MOSFET in a SMD-2 package on DBC carrier. With electrical performance up to 100krad(Si) TID and QIRL classification, it provides a simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. Ideal for interfacing with logic gates and microcontrollers, while maintaining immunity to single event gate rupture and burnout.
    Producent:
    Infineon
    Rozmiar:
    829 kB
    Stron:
    14
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    IRHLNMC77110

    This part is active, but not recommended for new design. A new footprint compatible package version will be released soon. IRHLNMC77110 R7 MOSFET is a radiation-hardened device with 100V, 6.5A rating. It's a single N-channel MOSFET in a SMD-0.2 package with electrical performance up to 100krad(Si) TID. Ideal for interfacing CMOS and TTL control circuits to power devices in space and other radiation environments, this COTS device maintains single event gate rupture and burnout immunity, while the threshold
    Producent:
    Infineon
    Rozmiar:
    661 kB
    Stron:
    15
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    IRHLF7S7214SCS

    IRHLF7S7214SCS R7 N-channel MOSFET is a radiation-hardened device with a voltage rating of 200V and a current rating of 3.3A. With electrical performance up to 100krad(Si) TID and QIRL classification, it's ideal for interfacing CMOS and TTL control circuits to power devices in radiation environments. It maintains a threshold voltage within limits over temperature and radiation, while maintaining immunity to single event gate rupture and burnout.
    Producent:
    Infineon
    Rozmiar:
    638 kB
    Stron:
    14
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    EB4 Burn-In

    Edgeboard Connectors, 200 °C Burn-In Connectors, Dual Readout
    Producent:
    Vishay
    Rozmiar:
    153 kB
    Stron:
    5