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    IAUTN15S6N025T

    150V, N-Ch, 2.5 mΩ max, Automotive MOSFET, TOLT (10x15), OptiMOS™ 6 IAUTN15S6N025T is built with Infineon’s leading-edge, power semiconductor technology OptiMOS™ 6 150V. It is offered in our versatile, robust, high current TOLT 10x15 mm² SMD package and designed for high performance, high quality and robustness needed for demanding automotive applications. Key characteristics include RoHS compliance, MSL1 rating, automotive quality beyond AEC-Q101, PPAP capability, and delivery in tape and reel format.
    Producent:
    Infineon
    Rozmiar:
    2372 kB
    Stron:
    12
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    IAUTN15S6N025G

    150V, N-Ch, 2.5 mΩ max, Automotive MOSFET, TOLG (10x12), OptiMOS™ 6 IAUTN15S6N025G is built with Infineon’s leading edge, power semiconductor technology OptiMOS™ 6 150V. It is offered in our versatile, robust, high current TOLG 10x12mm² SMD package and designed for high performance, high quality and robustness needed for demanding automotive applications. Key characteristics include RoHS compliance, MSL1 rating, automotive quality beyond AEC-Q101, PPAP capability, and delivery in tape and reel format.
    Producent:
    Infineon
    Rozmiar:
    2360 kB
    Stron:
    12
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    IAUTN15S6N038T

    150V, N-Ch, 3.8 mΩ max, Automotive MOSFET, TOLT (10x15), OptiMOS™ 6 IAUTN15S6N038T is built with Infineon’s leading-edge, power semiconductor technology OptiMOS™ 6 150V. It is offered in our versatile, robust, high current TOLT 10x15 mm² SMD package and designed for high performance, high quality and robustness needed for demanding automotive applications. Key characteristics include RoHS compliance, MSL1 rating, automotive quality beyond AEC-Q101, PPAP capability, and delivery in tape and reel format.
    Producent:
    Infineon
    Rozmiar:
    2355 kB
    Stron:
    12
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    IAUTN15S6N038G

    150V, N-Ch, 3.8 mΩ max, Automotive MOSFET, TOLG (10x12), OptiMOS™ 6 IAUTN15S6N038G is built with Infineon’s leading-edge, power semiconductor technology OptiMOS™ 6 150V. It is offered in our versatile, robust, high current TOLG 10x12 mm² SMD package and designed for high performance, high quality and robustness needed for demanding automotive applications. Key characteristics include RoHS compliance, MSL1 rating, automotive quality beyond AEC-Q101, PPAP capability, and delivery in tape and reel format.
    Producent:
    Infineon
    Rozmiar:
    2342 kB
    Stron:
    12
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    IAUTN15S6N025

    150V, N-Ch, 2.5 mΩ max, Automotive MOSFET, TOLL (10x12), OptiMOS™ 6 IAUTN15S6N025 is built with Infineon’s leading-edge, power semiconductor technology OptiMOS™ 6 150V. It is offered in our versatile, robust, high current TOLL 10x12 mm² SMD package and designed for high performance, high quality and robustness needed for demanding automotive applications. Key characteristics include RoHS compliance, MSL1 rating, automotive quality beyond AEC-Q101, PPAP capability, and delivery in tape and reel format.
    Producent:
    Infineon
    Rozmiar:
    2338 kB
    Stron:
    12
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    IAUTN15S6N038

    150V, N-Ch, 3.8 mΩ max, Automotive MOSFET, TOLL (10x12), OptiMOS™ 6 IAUTN15S6N038 is built with Infineon’s leading-edge, power semiconductor technology OptiMOS™ 6 150V. It is offered in our versatile, robust, high current TOLL 10x12 mm² SMD package and designed for high performance, high quality and robustness needed for demanding automotive applications. Key characteristics include RoHS compliance, MSL1 rating, automotive quality beyond AEC-Q101, PPAP capability, and delivery in tape and reel format.
    Producent:
    Infineon
    Rozmiar:
    2321 kB
    Stron:
    12
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    IMT65R010M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 10 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    1361 kB
    Stron:
    18
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    ISC016N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting pe
    Producent:
    Infineon
    Rozmiar:
    1268 kB
    Stron:
    15
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    ISC012N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting pe
    Producent:
    Infineon
    Rozmiar:
    1266 kB
    Stron:
    15
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    ISC011N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting per
    Producent:
    Infineon
    Rozmiar:
    1266 kB
    Stron:
    15
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    ISCH99N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting pe
    Producent:
    Infineon
    Rozmiar:
    1266 kB
    Stron:
    15
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    ISZ015N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in a PQFN 3.3 x 3.3 package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting
    Producent:
    Infineon
    Rozmiar:
    1265 kB
    Stron:
    13
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    ISCH54N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting pe
    Producent:
    Infineon
    Rozmiar:
    1221 kB
    Stron:
    15
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    ISCH69N04NM7V

    OptiMOS™ 7 40 V motor-drives optimized power MOSFETs in SuperSO8 (5x6) package. The Ultimate Motor-Drives Solution. The OptiMOS™ 7 40 V motor-drives optimized offers up to 3x wider Safe Operating Area vs. OptiMOS™ 6, providing highest reliability. An increased threshold voltage of 3.2 V offers enhanced induced turn-on ruggedness. 70% lower transconductance enables ease of use by improving current sharing, reducing voltage overshoot and an inherent short circuit current limitation characteristic boosting pe
    Producent:
    Infineon
    Rozmiar:
    1221 kB
    Stron:
    15
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    IMBG65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TO-263-7 package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    1172 kB
    Stron:
    17
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    IMW65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TO-247-3 package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    1100 kB
    Stron:
    17
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    IMZA65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TO-247-4 package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    981 kB
    Stron:
    17
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    ESD159-B1-W0201

    Bi-directional ESD protection device, 16 V, 0.10 pF, 0201 This Infineon ESD (electrostatic discharge) protection device has a bi-directional and symmetric I/V characteristic and excellent clamping performance combined with an extremely low capacitance.
    Producent:
    Infineon
    Rozmiar:
    851 kB
    Stron:
    14
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    ESD178-B1-W0201

    Bi-directional ESD protection device, 1 V, 0.21 pF, 0201 This Infineon ESD (electrostatic discharge) protection device has a bi-directional and symmetric I/V characteristic and excellent clamping performance.
    Producent:
    Infineon
    Rozmiar:
    831 kB
    Stron:
    14
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    ESD118-B1-W01005

    Bi-directional ESD protection device, 3.3 V, 0.9 pF, 01005 This Infineon ESD (electrostatic discharge) protection device has a bi-directional and symmetric I/V characteristic and excellent clamping performance.
    Producent:
    Infineon
    Rozmiar:
    830 kB
    Stron:
    14
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    ESD122-U1-W0201

    Uni-directional ESD protection device, 2.1 V, 0.75 pF, 0201 This Infineon ESD (electrostatic discharge) protection device has an uni-directional I/V characteristic and excellent clamping performance.
    Producent:
    Infineon
    Rozmiar:
    804 kB
    Stron:
    14
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    ESD179-B1-W0201

    Very low insertion loss bi-directional ESD protection device, 1 V, 0.06 pF, 0201 ESD protection device with a bi-directional I/V characteristic and excellent clamping performance, extremely low capacitance and insertion loss.
    Producent:
    Infineon
    Rozmiar:
    804 kB
    Stron:
    14
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    ESD175-B1-W01005

    Bi-directional ESD protection device, 1 V, 0.11 pF, 01005 This Infineon ESD (electrostatic discharge) protection device has a bi-directional and symmetric I/V characteristic and excellent clamping performance.
    Producent:
    Infineon
    Rozmiar:
    785 kB
    Stron:
    14
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    ERC (Military RNC/RNR)

    Metal Film Resistors, Axial, Military/Established Reliability, MIL-PRF-55182 Qualified, Precision, Type RNC, Characteristics J, H, K
    Producent:
    Vishay
    Rozmiar:
    140 kB
    Stron:
    4
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    HDN (Military RNR/RNN)

    Metal Film Resistors, Military/Established Reliability, Hermetically-Sealed, MIL-PRF-55182 Qualified, Precision, Type RNR, Characteristics E and C
    Producent:
    Vishay
    Rozmiar:
    79 kB
    Stron:
    4