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    IHW30N140R5L

    1400 V, 30 A IGBT discrete with reverse conducting diode in TO-247 3pin package RC Soft Switching 1400 V, 30 A IGBT discrete in a TO-247 3pin package has been designed to fulfill specific requirement of induction cooking applications. With a monolithically integrated diode, the 1400 V Reverse Conducting R5L IGBTs offer a higher breakdown voltage, lower VCEsat and overall lower power losses, bringing the perfect trade-off between power losses and EMI behavior for all soft switching applications.
    Producent:
    Infineon
    Rozmiar:
    1490 kB
    Stron:
    14
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    IHW20N140R5L

    1400 V, 20 A IGBT discrete with reverse conducting diode in TO-247 3pin package RC Soft Switching 1400 V, 20 A IGBT discrete in a TO-247 3pin package has been designed to fulfill specific requirement of induction cooking applications. With a monolithically integrated diode, the 1400 V Reverse Conducting R5L IGBTs offer a higher breakdown voltage, lower VCEsat and overall lower power losses, bringing the perfect trade-off between power losses and EMI behavior for all soft switching applications.
    Producent:
    Infineon
    Rozmiar:
    1469 kB
    Stron:
    14
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    IHW25N140R5L

    1400 V, 25 A IGBT discrete with reverse conducting diode in TO-247 3pin package RC Soft Switching 1400 V, 25 A IGBT discrete in a TO-247 3pin package has been designed to fulfill specific requirement of induction cooking applications. With a monolithically integrated diode, the 1400 V Reverse Conducting R5L IGBTs offer a higher breakdown voltage, lower VCEsat and overall lower power losses, bringing the perfect trade-off between power losses and EMI behavior for all soft switching applications.
    Producent:
    Infineon
    Rozmiar:
    1458 kB
    Stron:
    14
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    IKN03N60RC2

    600 V, 3 A IGBT Discrete with Reverse Conducting Drive 2-diode in SOT-223 package RC Drives 2 600 V, 3 A IGBT Discrete in PG- SOT-223 package. The RC-D2 with the monolithically integrated diode offers improvements of the performance, controllability and reliability compared to the RC-DF.
    Producent:
    Infineon
    Rozmiar:
    1422 kB
    Stron:
    17
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    IKN01N60RC2

    600 V, 1 A IGBT Discrete with Reverse Conducting Drive 2-diode in SOT-223 package RC Drives 2 600 V, 1 A IGBT Discrete in PG- SOT-223 package. The RC-D2 with the monolithically integrated diode offers improvements of the performance, controllability and reliability compared to the RC-DF.
    Producent:
    Infineon
    Rozmiar:
    1381 kB
    Stron:
    17
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    IHW40N140R5L

    1400 V, 40 A IGBT discrete with reverse conducting diode in TO-247 3pin package RC Soft Switching 1400 V, 40 A IGBT discrete in a TO-247 3pin package has been designed to fulfill specific requirement of induction cooking applications. With a monolithically integrated diode, the 1400 V Reverse Conducting R5L IGBTs offer a higher breakdown voltage, lower VCEsat and overall lower power losses, bringing the perfect trade-off between power losses and EMI behavior for all soft switching applications.
    Producent:
    Infineon
    Rozmiar:
    1359 kB
    Stron:
    14
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    IKN06N60RC2

    600 V, 6 A IGBT Discrete with Reverse Conducting Drive 2-diode in SOT-223 package RC Drives 2 600 V, 6 A IGBT Discrete in PG- SOT-223 package. The RC-D2 with the monolithically integrated diode offers improvements of the performance, controllability and reliability compared to the RC-DF.
    Producent:
    Infineon
    Rozmiar:
    1269 kB
    Stron:
    17
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    IKN04N60RC2

    600 V, 4 A IGBT Discrete with Reverse Conducting Drive 2-diode in SOT-223 package RC Drives 2 600 V, 4 A IGBT Discrete in PG- SOT-223 package. The RC-D2 with the monolithically integrated diode offers improvements of the performance, controllability and reliability compared to the RC-DF.
    Producent:
    Infineon
    Rozmiar:
    1246 kB
    Stron:
    17
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    IHW30N110R5

    1100 V, 30 A IGBT with monolithically integrated diode in TO-247 package Reverse Conducting R5 1100 V, 30 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using single-ended resonant topology. Thanks to best product performances and high compatibility with existing gate driver solution, 1100 V 30 A IGBT represents the optimal choice for soft switching topologies.
    Producent:
    Infineon
    Rozmiar:
    1222 kB
    Stron:
    15
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    CRD5AS-12B-T13#B00

    Reverse Conducting Thyristor Medium Power Use
    Producent:
    Renesas Electronics
    Rozmiar:
    471 kB
    Stron:
    6
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    NGTB40N65IHRT

    IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A
    Producent:
    onsemi
    Rozmiar:
    236 kB
    Stron:
    9
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    NGTB40N65IHR

    IGBT, Monolithic with Reverse Conducting Diode, 650 V, 40 A
    Producent:
    onsemi
    Rozmiar:
    198 kB
    Stron:
    9
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    NGTB40N65IHRT

    IGBT Monolithic with Reverse Conducting Diode, 650 V, 40 A
    Producent:
    ON Semiconductor
    Rozmiar:
    157 kB
    Stron:
    8
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    NGTB40N65IHRT

    IGBT Monolithic with Reverse Conducting Diode, 650 V, 40 A
    Producent:
    ON Semiconductor
    Rozmiar:
    128 kB
    Stron:
    8
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    NGTB40N65IHR

    IGBT Monolithic with Reverse Conducting Diode, 650 V, 40 A
    Producent:
    ON Semiconductor
    Rozmiar:
    127 kB
    Stron:
    8