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    IMT65R010M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 10 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
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    IMT65R060M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 60 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
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    IMT65R026M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 26 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
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    1359 kB
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    IMT65R015M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 15 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
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    1359 kB
    Stron:
    18
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    IMT65R020M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 20 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
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    Infineon
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    1358 kB
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    18
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    IMT65R033M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 33 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    1357 kB
    Stron:
    18
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    IMT65R040M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 40 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
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    Infineon
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    1355 kB
    Stron:
    18
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    IMT65R050M2H

    CoolSiC™ MOSFET 650 V G2 in TOLL package, 50 mΩ The CoolSiC™ MOSFET 650 V Generation 2 (G2) in TOLL is a trending option to leverage a very performing technology, like CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
    Rozmiar:
    1352 kB
    Stron:
    18
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    IMBG65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TO-263-7 package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
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    1172 kB
    Stron:
    17
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    IMW65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TO-247-3 package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
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    1100 kB
    Stron:
    17
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    IMZA65R075M2H

    CoolSiC™ MOSFET 650 V G2 in TO-247-4 package, 75 mΩ The CoolSiC™ MOSFET 650 V G2 is the trending option to leverage a very performing technology, like the CoolSiC™ G2. It overcomes the limits in thermal cycles of the conventional packages and it boats the .XT interconnect to reduce the thermal resistance. It is hence possible to fully use the characteristics of SiC, but maintaining a small footprint with a product which is the next logical step in power density.
    Producent:
    Infineon
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    981 kB
    Stron:
    17
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    BGA525N6

    The BGA525N6 is designed to enhance GNSS signal sensitivity for band L1/L2/L5 especially in wearables and mobile cellular IoT applications. With a high gain and ultra-low noise figure of the LNA, system sensitivity is significantly improved compared to conventional LNAs. Next to the Standard Mode, BGA525N6 offers a Low-power Mode and High-gain Mode. Operating in Low-power Mode, the LNA consumes less than 2 mW preserving valuable battery power, which is ideal for small battery powered GNSS devices. Operating
    Producent:
    Infineon
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    796 kB
    Stron:
    16
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    BGA9H1BN6

    BGA9H1BN6 low noise amplifier for 4G and 5G applications The BGA9H1BN6 is designed for 4G and 5G applications covering 3GPP bands between 2.5 and 2.7 GHz (for band n41). Thanks to a high gain and an ultra-low noise figure performance of the LNA the system sensitivity is significantly improved compared to conventional LNAs. The GPIO interface provides a straightforward control over multiple operation modes. Next to the high gain mode and bypass mode, a power-save and a high performance mode can be selected
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    Infineon
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    671 kB
    Stron:
    12