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IMZC140R038M2H

CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 38 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app

Producent:: Infineon
Rozmiar:: 1377 kB
Stron:: 18

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IMZC140R019M2H

CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 19 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app

Producent:: Infineon
Rozmiar:: 1373 kB
Stron:: 18

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IMZC140R024M2H

CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 24 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app

Producent:: Infineon
Rozmiar:: 1356 kB
Stron:: 18

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IMZC140R029M2H

CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 29 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app

Producent:: Infineon
Rozmiar:: 1354 kB
Stron:: 18

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IMZC140R011M2H

CoolSiC™ MOSFET discrete 1400 V in TO-247 4pin package with high creepage CoolSiC™ MOSFET discrete 1400 V, 11 mΩ G2 in TO-247 4pin combines cutting-edge SiC technology with robust high-creepage package. It enables designs with bus voltages beyond 1000 V. For existing applications, it offers both additional voltage margin and enhanced reliability. Furthermore, it allows increased switching speed leading to higher efficiency. Pin-to-pin compatible, it is suitable for PV, EV charging, and other industrial app

Producent:: Infineon
Rozmiar:: 1340 kB
Stron:: 18

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IMYR140R019M2H

CoolSiC™ MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package The CoolSiC™ MOSFET discrete 1400 V, 19 mΩ G2 in a TO-247PLUS-4 Reflow package is ideal for high-output power applications such as EV charging, ESS, CAV and other applications. The CoolSiC™ MOSFET G2 1400 V technology is a cutting-edge technology offering improved thermal performance, increased power density, and enhanced reliability. The package is the reflow capability (3 x reflow soldering possible) enabling lower thermal resistance.

Producent:: Infineon
Rozmiar:: 1233 kB
Stron:: 18

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IMYR140R024M2H

CoolSiC™ MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package The CoolSiC™ MOSFET discrete 1400 V, 24 mΩ G2 in a TO-247PLUS-4 Reflow package is ideal for high-output power applications such as EV charging, ESS, CAV and other applications. The CoolSiC™ MOSFET G2 1400 V technology is a cutting-edge technology offering improved thermal performance, increased power density, and enhanced reliability. The package is the reflow capability (3 x reflow soldering possible) enabling lower thermal resistance.

Producent:: Infineon
Rozmiar:: 1219 kB
Stron:: 18

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IMYR140R029M2H

CoolSiC™ MOSFET discrete 1400 V G2 in TO-247PLUS-4 Reflow package The CoolSiC™ MOSFET discrete 1400 V, 29 mΩ G2 in a TO-247PLUS-4 Reflow package is ideal for high-output power applications such as EV charging, ESS, CAV and other applications. The CoolSiC™ MOSFET G2 1400 V technology is a cutting-edge technology offering improved thermal performance, increased power density, and enhanced reliability. The package is the reflow capability (3 x reflow soldering possible) enabling lower thermal resistance.

Producent:: Infineon
Rozmiar:: 1213 kB
Stron:: 18

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18902101121

Latarka Varta Night Cutter F40 18902101121 1000 lm

Producent:: Varta
Rozmiar:: 1096 kB
Stron:: 2

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CYEL18V2562-200BKXE

Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require

Producent:: Infineon
Rozmiar:: 1054 kB
Stron:: 56

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CYEL18V5122-200BKXE

Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require

Producent:: Infineon
Rozmiar:: 974 kB
Stron:: 52

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CYEL18V2563-200BKXE

Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM & SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8 channel serial SRAM. This technology is packaged in a compact, low pincount plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites that require

Producent:: Infineon
Rozmiar:: 841 kB
Stron:: 51

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CYEL18V5123-200BKXE

Radiation tolerant, low-power, high bandwidth Pseudostatic RAM (pSRAM) in a small footprint Infineon's pSRAM is a cutting-edge memory solution that combines the benefits of both DRAM and SRAM. Internally, it's structured like a DRAM, but externally, it behaves like an 8- channel serial SRAM. This innovative technology is packaged in a compact, low pin count plastic component that boasts high-speed performance and a small footprint, making it an ideal choice for applications in low-earth orbit satellites th

Producent:: Infineon
Rozmiar:: 780 kB
Stron:: 50

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9005610000

Wire End Ferrule With Plastic Collar Cutter

Producent:: Weidmuller
Rozmiar:: 556 kB
Stron:: 6

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IGC100T75H12RYA

Unleashing the Power of Infineon's Cutting-Edge Si IGBT Technology Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.

Producent:: Infineon
Rozmiar:: 353 kB
Stron:: 8

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IDC52D75H8A

Unleashing the Power of Infineon's Cutting-Edge Si IGBT Technology Our latest EDT3 devices offer voltage classes of 750 V and 1200 V, delivering unprecedented output current for main inverter applications in low-cost and high-performance vehicles. With the ability to design and manufacture custom power modules tailored to specific application requirements, our Si IGBT & Diode solutions are set to transform the automotive landscape, elevating performance, efficiency, and reliability to new heights.