dcd (25) » Noty katalogowe | elecena.pl - wyszukiwarka elementów elektronicznych

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NCP6361

RF PA 1A Buck DCDC converter

Producent:: onsemi
Rozmiar:: 2141 kB
Stron:: 22

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MC33907LAE

System Basis chip, DCDC 1.5 A Vcore FS1b LDT, LQFP48EP, Tray

Producent:: NXP
Rozmiar:: 1645 kB
Stron:: 123

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AIMZHN120R160M1T

CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

Producent:: Infineon
Rozmiar:: 1632 kB
Stron:: 16

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AIMZHN120R030M1T

CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

Producent:: Infineon
Rozmiar:: 1603 kB
Stron:: 16

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AIMZHN120R060M1T

CoolSiC™ Automotive MOSFET 1200V G1p in TO247-4L package With Infineon’s performance optimized chip technology (Gen1p), the SiC MOSFET features best-in-class switching performance, robustness against parasitic turn-ons, as well as improved RDSon and Rth(j-c). High power density, superior efficiency, bi-directional charging capabilities and significant reductions in system costs making it an ideal choice for on-board charger and DCDC applications.

Producent:: Infineon
Rozmiar:: 1588 kB
Stron:: 16

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ISA250300C04LMDS

OptiMOS™ Dual N+P channel power MOSFET 40 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 40 V (ISA250300C04LMDS) in SO-8 package, Infineon offers a benchmark solution for best price performance products.The N+P dual channel MOSFETs are a perfect solution for applications such as lawn mower robots, vaccum robots, drones and many other low power DCDC applications. Moreover, the Dual MOSFETs are an excellent choice for creating compact and straightforward design solutions.

Producent:: Infineon
Rozmiar:: 1153 kB
Stron:: 18

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ISA220280C03LMDS

OptiMOS™ Dual N+P channel power MOSFET 30 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 30 V (ISA220280C03LMDS) in SO-8 package, Infineon offers a benchmark solution for best price performance products.The N+P dual channel MOSFETs are a perfect solution for applications such as lawn mower robots, vaccum robots, drones and many other low power DCDC applications. Moreover, the Dual MOSFETs are an excellent choice for creating compact and straightforward design solutions.

Producent:: Infineon
Rozmiar:: 1150 kB
Stron:: 18

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ISA150233C03LMDS

OptiMOS™ Dual N+P channel power MOSFET 30 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 30 V (ISA150233C03LMDS) in SO-8 package, Infineon offers a benchmark solution for best price performance products.The N+P dual channel MOSFETs are a perfect solution for applications such as lawn mower robots, vaccum robots, drones and many other low power DCDC applications. Moreover, the Dual MOSFETs are an excellent choice for creating compact and straightforward design solutions.

Producent:: Infineon
Rozmiar:: 1148 kB
Stron:: 18

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ISA170230C04LMDS

OptiMOS™ Dual N+P channel power MOSFET 40 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 40 V (ISA170230C04LMDS) in SO-8 package, Infineon offers a benchmark solution for best price performance products.The N+P dual channel MOSFETs are a perfect solution for applications such as lawn mower robots, vaccum robots, drones and many other low power DCDC applications. Moreover, the Dual MOSFETs are an excellent choice for creating compact and straightforward design solutions.

Producent:: Infineon
Rozmiar:: 1146 kB
Stron:: 18

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GS66516B-TR

CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66516B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66516B-MR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, renewable energy, on-board and off-board EV chargers, and industrial power supplies.

Producent:: Infineon
Rozmiar:: 1143 kB
Stron:: 17

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GS-065-060-5-T-A-TR

CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS-065-060-5-T-A-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current and high switching frequency. The GS-065-060-5-T-A-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as on-board and off-board EV chargers, traction drive, ACDC and DCDC converters, industrial power supplies and renewable energ

Producent:: Infineon
Rozmiar:: 1124 kB
Stron:: 18

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GS66516T-TR

CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66516T-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66516T-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, renewable energy, on-board and off-board EV chargers, and industrial power supplies.

Producent:: Infineon
Rozmiar:: 1099 kB
Stron:: 18

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GS66504B-TR

CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66504B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66504B-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives and industrial power supplies.

Producent:: Infineon
Rozmiar:: 1052 kB
Stron:: 17

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GS66508T-TR

CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66508T-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66508T-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives, on-board and off-board EV chargers, and industrial power supplies.

Producent:: Infineon
Rozmiar:: 1038 kB
Stron:: 20

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GS66508B-TR

CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66508B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66508B-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives, on-board and off-board EV chargers, and industrial power supplies.

Producent:: Infineon
Rozmiar:: 1008 kB
Stron:: 20

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GS66506T-TR

CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66506T-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66506T-TR is a top-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives and industrial power supplies.

Producent:: Infineon
Rozmiar:: 976 kB
Stron:: 18

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GS61004B-TR

CoolGaN™ Transistor 100 V ≤ G2 for ultimate efficiency and reliability The GS61004B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61004B-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as DCDC converters, motor drives, renewable energy systems and Class D audio amplifiers.

Producent:: Infineon
Rozmiar:: 970 kB
Stron:: 15

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GS66502B-TR

CoolGaN™ Transistor 650 V ≤ G3 for ultimate efficiency and reliability The GS66502B-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, high voltage breakdown and high switching frequency. The GS66502B-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as ACDC and DCDC converters, motor drives and industrial power supplies.

Producent:: Infineon
Rozmiar:: 938 kB
Stron:: 17

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GS61008P-TR

CoolGaN™ Transistor 100 V ≤ G2 for ultimate efficiency and reliability The GS61008P-TR is an enhancement mode GaN-on-Silicon power transistor. The properties of GaN allow for high current, low loss and high switching frequency. The GS61008P-TR is a bottom-side cooled transistor in a GaNPX® package with very low junction-to-case thermal resistance for high power applications such as DCDC converters, motor drives, renewable energy systems and Class D audio amplifiers.

Producent:: Infineon
Rozmiar:: 914 kB
Stron:: 21

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ISA250250N04LMDS

OptiMOS™ Dual N+N channel power MOSFET 40 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 40 V (ISA250250N04LMDS) in SO-8 package, Infineon offers a benchmark solution for best price performance products.The N+N dual channel MOSFETs are a perfect solution for applications such as lawn mower robots, vaccum robots, drones and many other low power DCDC applications. Moreover, the Dual MOSFETs are an excellent choice for creating compact and straightforward design solutions.

Producent:: Infineon
Rozmiar:: 884 kB
Stron:: 12

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ISA170170N04LMDS

OptiMOS™ Dual N+N channel power MOSFET 40 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 40 V (ISA170170N04LMDS) in SO-8 package, Infineon offers a benchmark solution for best price performance products.The N+N dual channel MOSFETs are a perfect solution for applications such as lawn mower robots, vaccum robots, drones and many other low power DCDC applications. Moreover, the Dual MOSFETs are an excellent choice for creating compact and straightforward design solutions.