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    IDWD10G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 10 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
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    1119 kB
    Stron:
    10
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    IDWD80G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 80 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
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    Infineon
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    1079 kB
    Stron:
    10
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    IDWD25G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 25 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
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    Infineon
    Rozmiar:
    1033 kB
    Stron:
    10
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    IDWD40G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 40 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
    Producent:
    Infineon
    Rozmiar:
    1021 kB
    Stron:
    10
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    IDWD50G200C5

    CoolSiC™ Schottky diode 2000 V in TO-247-2 package CoolSiC™ Schottky diode 2000 V, 50 A generation 5 in a TO-247-2 package enables higher efficiency and design simplification in high DC link systems up to 1500 VDC. The diode offers first-class thermal performance thanks to the .XT interconnection technology and is highly robust against humidity demonstrated in HV-H3TRB reliability tests. The diode exhibits neither reverse recovery current nor forward recovery and feature a low forward voltage, ensuring enh
    Producent:
    Infineon
    Rozmiar:
    976 kB
    Stron:
    10
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    JANTXVR2N7261U

    JANTXVR2N7261U is a high performance rad hard N-channel MOSFET designed for space applications with 100V and 8A rating. With electrical performance up to 500krad(Si) TID and packaged in an 18-pin LCC, these devices have demonstrated decades of reliability in satellite bus and payload applications. The low RDS(on) and low gate charge result in reduced power losses while providing the well-established advantages of MOSFETs.
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    Infineon
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    732 kB
    Stron:
    13