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    IGI60L5050A1M

    The IGI60L5050A1M combines a half-bridge power stage consisting of two GaN HEMTs with level shifters in a small 6 x 8 mm PG-TFLGA-27-2 package. The device uses the Infineon CoolGaN™ GIT which offers the highest Figure-of-Merit (FOM) and robustness. The internal bootstrap diode means that with minimal external components, designers can achieve full control to tune the rise/fall times while maintaining a simple system BOM. This is ideally suited to support the design of compact appliances in the low power app
    Producent:
    Infineon
    Rozmiar:
    842 kB
    Stron:
    27
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    IRL520N

    100V Single N-Channel Power MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
    Producent:
    Infineon
    Rozmiar:
    317 kB
    Stron:
    10