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    CYRS17B01G-133UZMB

    Infineon offers the space industry’s first QML qualified, radiation hardened by design, quad SPI (QSPI) NOR Flash. Infineon has expanded its line of radiation hardened NOR flash memory products, which offer the best combination of performance, density, and resistance to radiation and single event effects (SEE). Ideal for storing boot code and configuration images for space FPGAs.
    Producent:
    Infineon
    Rozmiar:
    1728 kB
    Stron:
    139
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    AIMCQ120R040M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1585 kB
    Stron:
    16
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    AIMCQ120R060M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1559 kB
    Stron:
    16
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    AIMCQ120R080M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1551 kB
    Stron:
    16
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    AIMCQ120R030M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1548 kB
    Stron:
    16
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    AIMCQ120R120M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1538 kB
    Stron:
    16
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    AIMCQ120R020M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1537 kB
    Stron:
    16
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    AIMCQ120R160M1T

    CoolSiC™ Automotive MOSFET 1200V G1p in Q-DPAK top-side cooled package The CoolSiC™ Automotive MOSFET 1200 V in Q-DPAK package is tailored to address OBC/DC-DC applications for 800V Automotive architecture. Leveraging Top-Side-Cooling (TSC) technology, it can provide customers with an outstanding thermal performance, easier assembly and reduced system cost. Compared to back-side cooling, TSC provides an optimized PCB assembly, thus eliminating parasitic effects and providing much lower stray inductances.
    Producent:
    Infineon
    Rozmiar:
    1537 kB
    Stron:
    16
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    5962F2122202VYC

    Infineon offers the space industry’s first DLAM QML-V qualified, radiation hardened by design, quad SPI (QSPI) NOR Flash. Our rad hard NOR flash, is the first in its family from Infineon, offering the highest performance, density, radiation, and single event effects (SEE) performance combination for space FPGA boot code and configuration image storage solutions for satellites.
    Producent:
    Infineon
    Rozmiar:
    1303 kB
    Stron:
    134
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    JANSR2N7585U2

    JANSR2N7585U2 N-channel MOSFET is a rad hard, 250V, 31.5A space-grade power MOSFET with low RDS(on) and gate charge. The SMD-2 package allows easy integration, and it's QPL certified. Electrical performance up to 100krad(Si) TID, with high tolerance to both Total Dose and Single Event Effects. Fast-switching, voltage-controlled, and stable even under high temperatures.
    Producent:
    Infineon
    Rozmiar:
    1284 kB
    Stron:
    14
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    IRHM7250SESCS

    This N-channel MOSFET, IRHM7250SESCS, is a single, high performance power device designed for space applications. With a voltage rating of 200V, it features low RDS(on) and low gate charge, making it ideal for DC-DC converters and motor control. The device is rad hard and has been characterized for Total Dose and Single Event Effects (SEE), with electrical performance up to 100krad(Si) TID. This COTS part comes in a standard TO-254AA package.
    Producent:
    Infineon
    Rozmiar:
    1175 kB
    Stron:
    8
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    ADP8866

    Charge Pump Driven 9-Channel LED Driver with Automated LED Lighting Effects
    Producent:
    Analog Devices
    Rozmiar:
    1149 kB
    Stron:
    52
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    RIC70847F

    Rad hard 17.1 V buck controller with integrated gate drivers RIC70847 is a radiation-hardened synchronous buck controller designed for harsh environments, such as space applications. It features integrated gate drivers and is specified for operation up to 100 krad(Si) total ionizing dose and single event effects (SEE) up to 81.9 MeV·cm²/mg linear energy transfer.
    Producent:
    Infineon
    Rozmiar:
    1124 kB
    Stron:
    40
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    IRH7150

    IRH7150 is a 100V, 34A rad hard R4 N-channel MOSFET. This R4 device is hermetically packaged in a TO-204AE and offers decades of proven performance and reliability in satellite applications. Characterized for Total Dose up to 100Krad(Si) and Single Event Effects (SEE), this COTS part is manufactured on a MIL-PRF-19500 line. Ideal for in switching applications such as motor control and DC-DC converters in space power system designs.
    Producent:
    Infineon
    Rozmiar:
    1106 kB
    Stron:
    13
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    JANSR2N7588T3

    The JANSR2N7588T3 N-channel MOSFET provides a reliable solution for space applications. With a voltage rating of 100V and current rating of 20A, these rad hard R6 MOSFETs have been characterized for Total Dose and Single Event Effects. Their low RDS(on) and gate charge minimize power losses in switching applications, and they offer voltage control and fast switching.
    Producent:
    Infineon
    Rozmiar:
    1073 kB
    Stron:
    14
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    IRHNS7460SESCS

    This R4 N-channel MOSFET in a SupIR-SMD package is a rad hard, 500V, 12A device for space applications. Its IR HiRel rad hard HEXFET technology provides high performance and reliability in satellite applications, with low RDS(on) and low gate charge for reduced power losses. Characterized for both Total Dose and Single Event Effects (SEE), this QIRL device offers electrical performance up to 100krad(Si) TID.
    Producent:
    Infineon
    Rozmiar:
    1034 kB
    Stron:
    8
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    ADP8866

    Charge Pump Driven 9-Channel LED Driver with Automated LED Lighting Effects
    Rozmiar:
    988 kB
    Stron:
    52
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    JANSR2N7647U3

    JANSR2N7647U3 is a rad hard N-channel MOSFET is a single MOSFET in a R9 SMD-0.5 package that can handle up to 60V and 40A. It is QPL classified with electrical performance up to 100krad(Si) TID. This R9 MOSFET has improved immunity to Single Event Effects and can be used in high-speed switching applications in space and satellite power systems.
    Producent:
    Infineon
    Rozmiar:
    866 kB
    Stron:
    14
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    IRHNJ57034SCSA

    The rad hard N-channel MOSFET IRHNJ57034SCSA in a SMD-0.5 package is a 60V, 22A high-performance power MOSFET designed for space applications. It is characterized for Total Dose and Single Event Effects (SEE) and is QPL qualified. With low RDS(on) and low gate charge, this R5 device reduces power losses in switching applications in satellite bus and payload power systems.
    Producent:
    Infineon
    Rozmiar:
    862 kB
    Stron:
    13
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    JANSR2N7561T2

    The rad hard N-channel MOSFET JANSR2N7561T2 offers up to 250V and 5.4A in a TO-205AF package. QPL qualification makes it ideal for space applications. With low RDS(on) and gate charge, this R5 MOSFET reduces power losses in switching applications. It's characterized for both Total Dose and Single Event Effects (SEE) and has proven performance and reliability in satellite applications.
    Producent:
    Infineon
    Rozmiar:
    828 kB
    Stron:
    13
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    TLE4971-A050N5-E0002

    XENSIV™ - TLE4971-A050N5-E0002 high precision coreless current sensor with single-ended analog interface and dual fast over-current detection outputs Coreless automotive current sensor, pre-programmed offers high precision current measurement in applications with lower currents usable for AC and DC measurements. All negative effects commonly known from sensors using flux concentration techniques are avoided. The differential measurement principle allows great stray field suppression for operation in harsh
    Producent:
    Infineon
    Rozmiar:
    779 kB
    Stron:
    25
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    JANSF2N7470T1

    The JANSF2N7470T1 R5 N-channel MOSFET is a radiation-hardened device designed for space applications. It has a high voltage rating of 60V and a current rating of 45A. The low RDS(on) and low gate charge make it ideal for DC-DC converters and motor control. The device also features electrical performance up to 300krad(Si) TID and has been characterized for Single Event Effects (SEE).
    Producent:
    Infineon
    Rozmiar:
    718 kB
    Stron:
    13
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    TS4999

    2 x 2.8 W stereo class D audio power amplifier with selectable 3D effects
    Producent:
    STMicroelectronics
    Rozmiar:
    716 kB
    Stron:
    36
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    TLE9371VLE

    Infineon’s TLE937x family with up to 8MB/s flexible data rate The CAN Signal Improvement transceivers enhance signal integrity, reduce ringing effects, and enable faster bit rates. They offer highly accurate transmitter, reduced ringing, increased CAN speed, improved EMC performance, and full CAN FD protocol operations. These transceivers facilitate more node connections, entry into complex applications, reduced cable weight and costs, and find potential use in gateway modules and body control modules.
    Producent:
    Infineon
    Rozmiar:
    639 kB
    Stron:
    38