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    2EDR6258X

    Fast, robust, dual-channel, reinforced isolated MOSFET gate drivers with accurate and stable timing. The EiceDRIVER™ 2EDR6258X is a reinforced isolated gate driver IC for control over the mandatory safe isolation barrier in SMPS. The strong 5A/9A source/sink gate driver features a high 150 V/ns CMTI for robust operation with SiC MOSFETs and high-power switching noise environment. The short propagation delay of 38ns is provided with low variation over temperature and production which enables the power syste
    Producent:
    Infineon
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    4640 kB
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    34
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    1EDR3147HQE

    5.7 kV (rms) single-channel gate driver IC with AEC-Q100 qualification, reinforced isolation, 6.5 A output current, 15 V UVLO EiceDRIVER™ Compact 2300 V single-channel isolated gate driver with +/-6.5 A typical peak output current in an 8-pin DSO wide body package for GaN HEMTs, IGBTs, MOSFETs and SiC MOSFETs. Qualified according to AEC-Q100. Offers Separate Outputs, enabling separate turn-on and turn-off gate resistors without the need for a bypass Schottky diode.
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    Infineon
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    2462 kB
    Stron:
    37
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    2EDL8023G3C

    120 V high side and low side 2EDL8023G3C EiceDRIVER™ 2EDL8023G3C is a high-side and low-side driver designed for advanced switching converters such as in telecom and datacom applications. 2EDL8023G3C takes in independent inputs with built-in hysteresis for enhanced noise immunity. 2EDL8023G3C have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching <6 ns that ensures volt-second balance and avoids magnetic core saturation. The driver comes in small 3x3
    Producent:
    Infineon
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    2097 kB
    Stron:
    27
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    2EDR3142XQE

    5.7 kV (rms) dual-channel gate driver IC with AEC-Q100 qualification, reinforced isolation, 6.5 A output current, 4.8 V UVLO EiceDRIVER™ Compact 2300 V dual-channel isolated gate driver with +/-6.5 A typical peak output current in a 14-pin DSO wide body package for GaN HEMTs, IGBTs, MOSFETs and SiC MOSFETs. Qualified according to AEC-Q100. Offers dead-time control (DTC) and independent channel operation, allowing for operation as a dual-channel low-side driver, a dual-channel high-side driver, or a half-br
    Producent:
    Infineon
    Rozmiar:
    1754 kB
    Stron:
    36
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    1EDI3050AS

    The EiceDRIVER™ 1EDI3050AS is an automotive qualified single-channel high-voltage gate driver optimized for IGBT and SiC power technologies. The EiceDRIVER™ 1EDI3051AS is galvanically isolated using Infineon’s coreless transformer technology. Comprehensive safety features and ISO 26262-compliance enable system level ASIL D classification, while accompanying safety documents ease FMEDA analysis. Full configurability via SPI enables platform development. The integrated high accuracy flyback controller can op
    Producent:
    Infineon
    Rozmiar:
    1739 kB
    Stron:
    150
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    1EDI3051AS

    The EiceDRIVER™ 1EDI3051AS is an automotive qualified single-channel high-voltage gate driver optimized for IGBT and SiC power technologies. The EiceDRIVER™1EDI3051AS uses robust Infineon Coreless Transformer Technology to provide bi-directional signal transfer across the galvanic isolation barrier. Comprehensive safety features and ISO 26262-compliance enable ASIL D classification on system level. Accompanying safety documents ease and speed-up FMEDA analysis in the application.
    Producent:
    Infineon
    Rozmiar:
    1730 kB
    Stron:
    148
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    2EDL5023U2D

    120V HB 2EDL50X3U2D EiceDRIVER™ Drive both high-side and low-side logic level MOSFETs in a half-bridge configuration. 120 V bootstrap voltage with integrated bootstrap diode and an active bootstrap clamp mechanism to avoid bootstrap capacitor overcharge during deadtime. with TTL logic compatible inputs and split outputs to provide flexibility in adjusting the turn-on and turn-off strength independently and an active miller clamp is implemented to avoid induced turn-on.
    Producent:
    Infineon
    Rozmiar:
    1404 kB
    Stron:
    30
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    2ED1322S12M

    1200 V high current half-bridge gate driver IC with integrated bootstrap diode and OCP EiceDRIVER™ 1200 V half-bridge gate driver IC with typical 2.3 A source, 4.6 A sink current and cross conduction prevention in DSO-16 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1322S12M is based on our SOI-technology which has an excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robu
    Producent:
    Infineon
    Rozmiar:
    1268 kB
    Stron:
    35
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    1EDI3025AS

    The EiceDRIVER™ 1EDI3025AS is an automotive qualified single-channel high-voltage gate driver optimized for IGBT technologies. The EiceDRIVER™ gate driver 1EDI3025AS is a high-voltage IGBT driver designed for automotive applications, with 8 kV galvanic insulation using coreless transformer (CT) technology. It features a powerful output stage of up to 20 A peak current for high power switches. It has a split output stage enabling different slew rates for switching on and off via separate gate resistors and
    Producent:
    Infineon
    Rozmiar:
    1215 kB
    Stron:
    76
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    1EDI3035AS

    The EiceDRIVER™ 1EDI3035AS is an automotive qualified single-channel high-voltage gate driver optimized for SiC MOSFET. The EiceDRIVER™ gate driver 1EDI3035AS is a high-voltage SiC MOSFET driver for automotive applications, featuring 8 kV galvanic insulation with coreless transformer (CT) technology. The IC supports up to 1200 V SiC-MOSFETs and is ideally suitable to drive the IGBT + SiC HybridPACK™ Drive G2 Fusion module. The device features a powerful output stage of up to 20 A peak current required for
    Producent:
    Infineon
    Rozmiar:
    1193 kB
    Stron:
    76
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    1EDI3026AS

    The EiceDRIVER™ 1EDI3026AS is an automotive qualified single-channel high-voltage gate driver optimized for IGBT technologies. The EiceDRIVER™ gate driver 1EDI3026AS is a high-voltage IGBT driver for automotive applications, offering 8 kV galvanic insulation with coreless transformer (CT) technology. It provides a powerful output stage with up to 20 A peak current for high power switches. It features a split output stage for different slew rates during switching on and off, achieved by separate gate resist
    Producent:
    Infineon
    Rozmiar:
    1190 kB
    Stron:
    76
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    1EDI3028AS

    The EiceDRIVER™ 1EDI3028AS is an automotive qualified single-channel high-voltage driver optimized for IGBT technologies. The EiceDRIVER™ gate driver 1EDI3028AS is a high-voltage IGBT driver for automotive applications, providing 8 kV galvanic insulation with coreless transformer (CT) technology. It offers a powerful output stage with up to 15 A peak current for high power switches. It features a split output stage for different slew rates during switching on and off, achieved by separate gate resistors, a
    Producent:
    Infineon
    Rozmiar:
    1167 kB
    Stron:
    72
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    1EDI3038AS

    The EiceDRIVER™ 1EDI3038AS is an automotive qualified single-channel high-voltage gate driver optimized for SiC MOSFET. The EiceDRIVER™ gate driver 1EDI3038AS is a high-voltage SiC MOSFET driver for automotive applications, offering 8 kV galvanic insulation with coreless transformer (CT) technology. It provides a powerful output stage with up to 15 A peak current for high power switches and includes a split output stage enabling different slew rates for switching on and off. The DESAT protection and config
    Producent:
    Infineon
    Rozmiar:
    1146 kB
    Stron:
    70
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    6ED2230S12C

    1200 V, 0.65 A three phase gate driver IC bare die with integrated bootstrap diode and over current protection EiceDRIVER™ 1200 V three-phase gate driver with 0.35 A source and 0.65 A sink currents is offered in Wafer-on-Film. Utilizing our 1200 V SOI technology, 6ED2230S12C provides unique advantages including low-ohmic integrated bootstrap-diode (BSD) and best-in-class robustness to protect against negative transient voltage spikes. It is for designs up to about 6 kW. Contact our sales offices for sample
    Producent:
    Infineon
    Rozmiar:
    1121 kB
    Stron:
    28
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    6ED2231S12C

    1200 V, 0.65 A three phase gate driver IC bare die with integrated bootstrap diode and over current protection EiceDRIVER™ 1200 V three-phase gate driver with 0.35 A source and 0.65 A sink currents is offered in Wafer-on-Film. Utilizing our 1200 V SOI technology, 6ED2231S12C provides unique advantages including low-ohmic integrated bootstrap-diode (BSD) and best-in-class robustness to protect against negative transient voltage spikes. It is for designs up to about 6 kW. Contact our sales offices for sample
    Producent:
    Infineon
    Rozmiar:
    1120 kB
    Stron:
    28
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    2ED1324S12P

    1200 V half-bridge gate driver IC with AMC (Active Miller Clamp), SCC (Short Circuit Clamp) EiceDRIVER™ 1200 V half-bridge gate driver IC with 2.3 A source, 2.3 A sink current and cross conduction prevention in the sufficient creepage, clearance distance DSO-20 (300mils) package for 1200 V SiC MOSFET and IGBT power devices. The 2ED1324S12P supports Active Miller Clamp (AMC), Short Circuit Clamp (SCC) and Cross conduction prevention for the best in class switching performance in the sufficient creepage/clea
    Producent:
    Infineon
    Rozmiar:
    1102 kB
    Stron:
    34
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    1ED3012MC12I

    5.7 kV (rms) single-channel gate driver IC with reinforced isolation, 6.5 A output current, Opto-emulator input, 12.5 V UVLO EiceDRIVER™ Lite 2300 V single-channel isolated gate driver with 6.5 A sinking and 6 A sourcing peak output current in 6-pin LDSO wide body package for SiC MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    883 kB
    Stron:
    27
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    6EDL04I06PC

    600 V three-phase gate driver IC bare die with integrated bootstrap diode, over current protection, enable and fault reporting EiceDRIVER™ 600 V three phase gate driver IC bare die for MOS-transistors and IGBTs with 0.17 A source and 0.375 A sink currents and LS-SOI technology.
    Producent:
    Infineon
    Rozmiar:
    736 kB
    Stron:
    25
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    1ED2147S65F

    650 V high-side gate driver IC with over current protection (OCP), multi-function RCIN/Fault/Enable (RFE) and integrated bootstrap diode (BSD) EiceDRIVER™ 650 V high side single channel gate driver IC with a typical 4 A source and 4 A sink current in DSO-8 package for IGBTs, MOSFETs and SiC MOSFETs.
    Producent:
    Infineon
    Rozmiar:
    669 kB
    Stron:
    21
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    1ED3330MC12M

    5.7kV (rms) single-channel galvanic isolated gate driver IC with DESAT, active Miller clamp driver, Soft-off, UVLO, and shutdown with fault EiceDRIVER™ Enhanced 5.7 kV single-channel isolated gate driver IC with ±12 A typical sinking and sourcing peak output current in small space-saving DSO-16 fine pitch wide-body package with large creepage distance (>8 mm) ideal for SiC MOSFETs. The gate driver IC also includes integrated protection features such as DESAT protection, active Miller clamp driver, and a
    Producent:
    Infineon
    Rozmiar:
    588 kB
    Stron:
    27
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    1EDL8011

    125 V high-side gate driver with single output in DSO-8 package for battery-powered applications The EiceDRIVER™ 1EDL8011 provides fast turn-on/ turn-off of high-side N-channel MOSFETs with its powerful gate current capabilities. For battery-powered applications, 1EDL8011 is used to manage inrush current & protects in case of faults. The driver is available in DSO-8 package including OCP protection feature, adjustable current setting threshold, time delay and a safe start-up mechanism with flexible bla
    Producent:
    Infineon
    Rozmiar:
    541 kB
    Stron:
    26
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    2EDN1153DAA

    12 V smart dual-channel high-side MOSFET gate driver with SPI enabling advanced automotive applications EiceDRIVER™ APD 2EDN1153DAA is an ISO 26262 compliant dual-channel protected high-side MOSFET gate driver for 12 V applications. Its high digital integration allows the monitoring of many signals (such as gate, source, drain voltages) with configurable thresholds for an improved system control. The advanced feature set make it the ideal device for safe, efficient and scalable electrification for modern v
    Producent:
    Infineon
    Rozmiar:
    113 kB
    Stron:
    1
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    2EDN1132DAA

    12 V smart dual-channel high-side MOSFET gate driver with SPI enabling advanced automotive applications EiceDRIVER™ APD 2EDN1132DAA is an ISO 26262-compliant dual-channel protected high-side MOSFET gate driver for 12 V applications. Its high digital integration allows the monitoring of many signals (such as gate, source, drain voltages) with configurable thresholds for an improved system control. The advanced feature set make it the ideal device for safe, efficient and scalable electrification for modern v
    Producent:
    Infineon
    Rozmiar:
    113 kB
    Stron:
    1