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    FF1MR12MM1H-B11

    CoolSiC™ MOSFET dual module 1200 V
    Producent:
    Infineon
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    1612 kB
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    19
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    FF1MR12MM1HW-B11

    CoolSiC™ MOSFET half-bridge module 1200 V EconoDUAL™ 3 CoolSiC™ MOSFET half-bridge module 1200 V, 1.4 mΩ with enhanced generation 1, integrated NTC temperature sensor, PressFIT Contact Technology and wave structure on the back side of the base plate for direct liquid cooling.
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    Infineon
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    1442 kB
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    20
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    FF172

    Thrml Mgmt Access Finger Guard Steel Wire
    Producent:
    ebm-papst
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    1414 kB
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    24
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    FF1MR12MM1HP-B11

    CoolSiC™ MOSFET half-bridge module 1200 V EconoDUAL™ 3 CoolSiC™ MOSFET half-bridge module 1200 V, 1.4 mΩ with enhanced generation 1, integrated NTC temperature sensor, PressFIT contact technology, and pre-applied Thermal Interface Material. Also available with wave structure on the back side of the base plate for direct liquid cooling (FF1MR12MM1HWB11).
    Producent:
    Infineon
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    1406 kB
    Stron:
    19
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    UPD48011418FF-FH12-FF1-A

    Low Latency DRAM
    Producent:
    Renesas Electronics
    Rozmiar:
    1193 kB
    Stron:
    51
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    UPD48011318FF-FH19-FF1-A

    Low Latency DRAM
    Producent:
    Renesas Electronics
    Rozmiar:
    1174 kB
    Stron:
    51
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    FF1300UXTR23T2M1P

    CoolSiC™ MOSFET half-bridge module 2300 V XHP™ 2 CoolSiC™ MOSFET 2300 V, 1.3 mΩ module with half-bridge topology, robust .XT interconnection technology for enhanced lifetime with best in class reliability and with pre-applied Thermal Interface Material (TIM).
    Producent:
    Infineon
    Rozmiar:
    987 kB
    Stron:
    17
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    FF1000UXTR23T2M1P

    CoolSiC™ MOSFET half-bridge module 2300 V XHP™ 2 CoolSiC™ MOSFET 2300 V, 1.3 mΩ module with halfbridge topology, robust .XT interconnection technology for enhanced lifetime with best in class reliability and with pre-applied Thermal Interface Material (TIM).
    Producent:
    Infineon
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    973 kB
    Stron:
    17
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    FF1300UXTR23T2M1

    CoolSiC™ MOSFET half-bridge module 2300 V XHP™ 2 CoolSiC™ MOSFET 2300 V, 1.3 mΩ module with half-bridge topology and robust .XT interconnection technology for enhanced lifetime with best in class reliability. Also available with pre-applied Thermal Interface Material (TIM).
    Producent:
    Infineon
    Rozmiar:
    950 kB
    Stron:
    17
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    FF1000UXTR23T2M1

    CoolSiC™ MOSFET half-bridge module 2300 V XHP™ 2 CoolSiC™ MOSFET 2300 V, 1.0 mΩ module with half-bridge topology and robust .XT interconnection technology for enhanced lifetime with best in class reliability. Also available with pre-applied Thermal Interface Material (TIM).
    Producent:
    Infineon
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    942 kB
    Stron:
    17
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    FF1MR12KM1H-S

    62mm CoolSiC™ MOSFET half bridge module 1200V common source topology 62 mm CoolSiC™ MOSFET half bridge module 1200 V, 1 mOhm RDS(on) in the well known 62mm housing combined with M1H chip technology. Now also available with common source configuration
    Producent:
    Infineon
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    907 kB
    Stron:
    18
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    FF1400R23T2E7P-B5

    2300 V, 1400 A dual IGBT module XHP™ 2 2300 V, 1400 A dual IGBT module in low inductive XHP™ 2 housing with Thermal Interface Material including TRENCHSTOP™ IGBT7 for high power density and providing 6 kV isolation voltage to address 3-level topologies.
    Producent:
    Infineon
    Rozmiar:
    830 kB
    Stron:
    16
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    FF1400R23T2E7-B5

    2300 V, 1400 A dual IGBT module XHP™ 2 2300 V, 1400 A dual IGBT module in low inductive XHP™ 2 housing including TRENCHSTOP™ IGBT7 for high power density and providing 6 kV isolation voltage to address 3-level topologies. Also available with pre-applied Thermal Interface Material (TIM).
    Producent:
    Infineon
    Rozmiar:
    826 kB
    Stron:
    16
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    FF1000UXTR23T2M1-B5

    CoolSiC™ MOSFET halfbridge module 2300 V XHP™ 2 CoolSiC™ MOSFET 2.3 kV, 1.0 mΩ with halfbridge topology and robust .XT interconnection technology for enhanced lifetime with best in class reliability.
    Producent:
    Infineon
    Rozmiar:
    806 kB
    Stron:
    18
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    FF1400R17IP4PBOSA1

    Trans IGBT Module N-CH 1700V 1400A
    Producent:
    Infineon
    Rozmiar:
    689 kB
    Stron:
    10
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    FF150R12W2T7E-B11

    1200 V, 150 A common emitter IGBT module EasyDUAL™ 2B, 1200 V, 150 A common emitter IGBT module with TRENCHSTOP™ IGBT T7, EC7, Pressfit Pin, and NTC.
    Producent:
    Infineon
    Rozmiar:
    623 kB
    Stron:
    16
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    FF100R12W1T7E-B11

    1200 V, 100 A common emitter IGBT module EasyDUAL™ 1B, 1200 V, 100 A common emitter IGBT module with TRENCHSTOP™ IGBT T7, EC7, Pressfit Pin, and NTC.
    Producent:
    Infineon
    Rozmiar:
    517 kB
    Stron:
    16
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    CD1408-FF11500

    Diode Switching 1.5KV 1A 2-Pin Case 1408 T/R
    Producent:
    Bourns
    Rozmiar:
    489 kB
    Stron:
    4
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    FF119

    Thrml Mgmt Access Fan Filter Guard 119mm
    Producent:
    ebm-papst
    Rozmiar:
    65 kB
    Stron:
    1